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7NM65のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL SUPER-JUNCTION MOSFET」です。 |
部品番号 | 7NM65 |
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部品説明 | N-CHANNEL SUPER-JUNCTION MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと7NM65ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
UNISONIC TECHNOLOGIES CO., LTD
7NM65
Preliminary
7A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 7NM65 is an Super Junction MOSFET Structure. It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 7NM65 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* Low drain-source on-resistance: RDS(ON) < 0.9 Ω (max.)
by using Super Junction Structure
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM65L-TF3-T
7NM65G-TF3-T
7NM65L-TA3-T
7NM65G-TA3-T
7NM65L-TM3-T
7NM65G-TM3-T
7NM65L-TN3-R
7NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
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1 Page 7NM65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS ±30 V
IAR 2 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
7A
28 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
60 mJ
4.5 V/ns
Power Dissipation
TO-220F/TO-220F1
TO-251/TO-252
PD
48
60
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤7A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F/TO-220F1
TO-251/TO-252
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
2.6
2.08
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-042.b
3Pages 7NM65
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
RL
D.U.T.
VDD
Power MOSFET
Switching Test Circuit
Switching Waveforms
Same
12V
50kΩ
0.2µF
0.3µF
Type as
D.U.T.
VDS
VGS
3mA
DUT
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ 7NM65 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
7NM60 | 600V N-CHANNEL POWER MOSFET | UNISONIC TECHNOLOGIES |
7NM65 | N-CHANNEL SUPER-JUNCTION MOSFET | Unisonic Technologies |