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7NM65 の電気的特性と機能

7NM65のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL SUPER-JUNCTION MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 7NM65
部品説明 N-CHANNEL SUPER-JUNCTION MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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7NM65 Datasheet, 7NM65 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
7NM65
Preliminary
7A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 7NM65 is an Super Junction MOSFET Structure. It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 7NM65 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* Low drain-source on-resistance: RDS(ON) < 0.9 (max.)
by using Super Junction Structure
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM65L-TF3-T
7NM65G-TF3-T
7NM65L-TA3-T
7NM65G-TA3-T
7NM65L-TM3-T
7NM65G-TM3-T
7NM65L-TN3-R
7NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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7NM65 pdf, ピン配列
7NM65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS ±30 V
IAR 2 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
7A
28 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
60 mJ
4.5 V/ns
Power Dissipation
TO-220F/TO-220F1
TO-251/TO-252
PD
48
60
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD7A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F/TO-220F1
TO-251/TO-252
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
2.6
2.08
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7NM65 電子部品, 半導体
7NM65
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width1μs
Duty Factor0.1%
RL
D.U.T.
VDD
Power MOSFET
Switching Test Circuit
Switching Waveforms
Same
12V
50k
0.2µF
0.3µF
Type as
D.U.T.
VDS
VGS
3mA
DUT
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

Link :


部品番号部品説明メーカ
7NM60

600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
7NM65

N-CHANNEL SUPER-JUNCTION MOSFET

Unisonic Technologies
Unisonic Technologies


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