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IRLML5203PBF の電気的特性と機能

IRLML5203PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLML5203PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLML5203PBF Datasheet, IRLML5203PBF PDF,ピン配置, 機能
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l RoHS Compliant, Halogen-Free
Description
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3TM, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
VDSS
-30V
G1
S2
IRLML5203PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
98@VGS = -10V
165@VGS = -4.5V
ID
-3.0A
-2.6A
3D
Micro3TM
Base Part Number
IRLML5203TRPbF
Package Type
Micro3(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel 3000
Orderable Part Number
IRLML5203TRPbF
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
Max.
100
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
April 28, 2014

1 Page





IRLML5203PBF pdf, ピン配列
IRLML5203PbF
100
10
VGS
TOP -15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
1
-2.70V
0.1
0.01
0.1
20μs PULSE WIDTH
TJ= 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
VGS
TOP -15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
1
-2.70V
0.1
0.1
20μs PULSE WIDTH
TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100 2.0 ID = 3.0A
1.5
10
TJ = 150° C
1
0.1
2.0
TJ = 25° C
V DS= -15V
20μs PULSE WIDTH
3.0 4.0 5.0 6.0
-VGS , Gate-to-Source Voltage (V)
7.0
1.0
0.5
0.0 VGS = -10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
3 www.irf.com © 2014 International Rectifier
Fig 4. Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
April 28, 2014


3Pages


IRLML5203PBF 電子部品, 半導体
IRLML5203PbF
0.14
0.13
0.12
0.11
0.10
0.09 ID = -3.0A
0.08
0.07
4.0
6.0 8.0 10.0 12.0 14.0
-VGS, Gate -to -Source Voltage (V)
16.0
Fig 11. Typical On-Resistance Vs. Gate
Voltage
0.40
0.30
0.20 VGS = -4.5V
0.10
VGS = -10V
0.00
0
4 8 12
-ID , Drain Current (A)
16
Fig 12. Typical On-Resistance Vs. Drain
Current
QGS
VG
QG
QGD
Charge
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6 www.irf.com © 2014 International Rectifier
Fig 13b. Gate Charge Test Circuit
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April 28, 2014

6 Page



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部品番号部品説明メーカ
IRLML5203PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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