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IRLML2246TRPbF の電気的特性と機能

IRLML2246TRPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLML2246TRPbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLML2246TRPbF Datasheet, IRLML2246TRPbF PDF,ピン配置, 機能
PD - 97630A
IRLML2246TRPbF
VDS
VGS Max
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
-20
±12
135
236
Application(s)
System/Load Switch
V
V
m
m
HEXFET® Power MOSFET
*
'
6  Micro3TM (SOT-23)
IRLML2246TRPbF
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
VGS
TJ, TSTG
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRJA Junction-to-Ambient
fRJA Junction-to-Ambient (t<10s)
Max.
-20
-2.6
-2.1
-11
1.3
0.80
0.01
± 12
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
03/09/12

1 Page





IRLML2246TRPbF pdf, ピン配列
IRLML2246TRPbF
100
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
100
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
1
0.1
0.1
-1.5V
60μs PULSE WIDTH
Tj = 25°C
1 10
-V DS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1
-1.5V
0.1
0.1
60μs PULSE WIDTH
Tj = 150°C
1 10
-V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10
1 TJ = 150°C
TJ = 25°C
VDS = -15V
60μs PULSE WIDTH
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1.6
ID = -2.6A
VGS = -4.5V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRLML2246TRPbF 電子部品, 半導体
IRLML2246TRPbF
300
ID = -2.6A
250
200
150
100 TJ = 125°C
TJ = 25°C
50
1 2 3 4 5 6 7 8 9 10 11 12
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs.
Gate Voltage
1200
1000
800
Vgs = -2.5V
600
400
Vgs = -4.5V
200
0
0 2 4 6 8 10 12 14 16
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs.
Drain Current
Id
Vgs
Vds
Vgs(th)
0
Qgodr
Qgd Qgs2 Qgs1
Fig 14a. Basic Gate Charge Waveform
6
L
DUT
210K
SS
VCC
Fig 14b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRLML2246TRPbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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