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Número de pieza | IRL8114PbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Capacitance and Avalanche SOA
Lead-Free
IRL8114PbF
HEXFET® Power MOSFET
D VDSS
30V
RDS(on) typ.
3.5m
G
max
4.5m
ID (Silicon Limited)
120A
IS
D (Package Limited)
90A
Base part number
IRL8114PbF
Package Type
TO-220
GDS
TO-220AB
IRL8114PbF
G
Gate
Standard Pack
Form
Quantity
Tube
50
D
Drain
S
Source
Orderable Part Number
IRL8114PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Symbol
Parameter
RJC
RCS
Junction-to-Case
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Notes through are on page 7
Max.
120
85
90
440
115
58
0.77
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
°C
Typ.
–––
0.50
–––
Max.
1.3
–––
62
Units
°C/W
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 11, 2015
1 page 10
IRL8114PbF
1 D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
I AS
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
VDD
Fig 15b. Switching Time Waveforms
Vds
Id
Vgs
Vgs(th)
Fig 16a. Gate Charge Test Circuit
5 www.irf.com © 2015 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 16b. Gate Charge Waveform
Submit Datasheet Feedback
March 11, 2015
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRL8114PbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL8114PbF | Power MOSFET ( Transistor ) | International Rectifier |
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