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PDF IRL7486MTRPbF Data sheet ( Hoja de datos )

Número de pieza IRL7486MTRPbF
Descripción N-Channel Power MOSFET / Transistor
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRL7486MTRPbF Hoja de datos, Descripción, Manual

Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRL7486MTRPbF
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ.
max
@ VGS = 10V
RDS(on) typ.
max
@ VGS = 4.5V
ID (Silicon Limited)
40V
1.0m
1.25m
1.5m
2.0m
209A
 
S
S
S
D
GS
S
S
ME
 
D
DirectFET® ISOMETRIC
Base part number
IRL7486MPbF
Package Type
DirectFET® ME
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRL7486MTRPbF
4.0
3.5 ID = 123A
3.0
2.5
2.0
TJ = 125°C
1.5
1.0 TJ = 25°C
0.5
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
220
200
180
160
140
120
100
80
60
40
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
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IRL7486MTRPbF pdf
   IRL7486MTRPbF
1000
1000
100 TJ = 150°C
10
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1.0
Fig 9. Typical Source-Drain Diode Forward Voltage
50
Id = 1.0mA
49
48
47
46
45
44
43
42
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
4.5
Vgs = 3.5V
4.0 Vgs = 4.0V
Vgs = 4.5V
3.5
Vgs = 5.5V
Vgs = 6.0V
3.0
Vgs = 8.0V
Vgs = 10V
2.5
100
10
100µsec
OPERATION
IN THIS AREA
LIMITED BY RDS(on)
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01 0.1
10msec
DC
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
2.0
1.5
1.0
0.5
0 20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
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IRL7486MTRPbF arduino
  
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
IRL7486MTRPbF
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
METRIC
IMPERIAL
MIN MAX MIN MAX
7.90 8.10 0.311 0.319
3.90 4.10 0.154 0.161
11.90 12.30 0.469 0.484
5.45 5.55 0.215 0.219
5.10 5.30 0.201 0.209
6.50 6.70 0.256 0.264
1.50 N.C 0.059 N.C
1.50 1.60 0.059 0.063
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. Ordered as IRL7486MTRPBF.
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
METRIC
IMPERIAL
CODE MIN MAX
MIN MAX
A 330.0 N.C 12.992 N.C
B 20.2 N.C 0.795 N.C
C 12.8 13.2 0.504 0.520
D 1.5 N.C 0.059 N.C
E 100.0 N.C 3.937 N.C
F
N.C 18.4
N.C 0.724
G 12.4 14.4 0.488 0.567
H 11.9 15.4 0.469 0.606
Note: For the most current drawing please refer to IR webite at http://www.irf.com/package/
Qualification Information 
Qualification Level  
Industrial *
(per JEDEC JESD47F†† guidelines)
Moisture Sensitivity Level
RoHS Compliant
DFET 1.5
MSL1
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions.
Revision History
Date
Comments
05/14/2015  Updated registered trademark from DirectFETTM to DirectFET® on page 1,9 and 10.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2015 International Rectifier
Submit Datasheet Feedback
May 14, 2015

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