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IRL7472L1TRPbF の電気的特性と機能

IRL7472L1TRPbFのメーカーはInternational Rectifierです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL7472L1TRPbF
部品説明 N-Channel Power MOSFET / Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRL7472L1TRPbF Datasheet, IRL7472L1TRPbF PDF,ピン配置, 機能
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRL7472L1TRPbF
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ.
max
@ VGS = 10V
RDS(on) typ.
max
@ VGS = 4.5V
ID (Silicon Limited)
40V
0.34m
0.59m
0.52m
0.97m
564A
 
D
S
S
S
G
S
L8
S
S
D
S
S
 
DirectFETISOMETRIC
Base part number
Package Type
IRL7472L1PbF Direct FET Large Can (L8)
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRL7472L1TRPbF
1.6
ID = 195A
1.4
1.2
1.0
0.8 TJ = 125°C
0.6
0.4
0.2 TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
600
500 Limited by package
400
300
200
100
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 25, 2015

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IRL7472L1TRPbF pdf, ピン配列
   IRL7472L1TRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
      
 
Min. Typ. Max. Units
Conditions
232 ––– –––
––– 220 330
––– 95 –––
––– 87 –––
––– 133 –––
––– 68 –––
––– 176 –––
––– 174 –––
––– 137 –––
––– 20082 –––
––– 2436 –––
––– 1594 –––
S VDS = 10V, ID = 195A
ID = 195A
nC
VDS = 20V
VGS = 4.5V
ID = 195A, VDS =0V, VGS = 4.5V
VDD = 20V
ns
ID = 30A
RG = 2.7
VGS = 4.5V
VGS = 0V
VDS = 25V
pF ƒ = 10kHz
––– 2855 –––
VGS = 0V, VDS = 0V to 32V
––– 3544 –––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
dv/dt
Peak Diode Recovery
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
  
Min. Typ. Max.
––– ––– 341
––– –––
––– –––
––– 1.3
––– 57
––– 58
––– 103
––– 114
––– 3.1
1500
1.2
–––
–––
–––
–––
–––
–––
  
 
Units
Conditions
MOSFET symbol
A
showing the
integral reverse
G
D
p-n junction diode.
S
V TJ= 25°C, IS =195A, VGS = 0V
V/ns
TJ =175°C, IS =195A,
VDS = 40V
ns
TJ = 25° C VR = 34V,
TJ = 125°C IF = 195A
nC
TJ = 25°C di/dt = 100A/µs
TJ = 125°C
A TJ = 25°C
Notes:
Package limit current based on source connection technology
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.016mH, RG = 50, IAS = 195A, VGS =10V.
ISD 195A, di/dt 984A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 39A, VGS =10V.
Silicon limit current based on maximum allowable junction temperature TJmax.
3 www.irf.com © 2015 International Rectifier
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February 25, 2015


3Pages


IRL7472L1TRPbF 電子部品, 半導体
  
1
IRL7472L1TRPbF
D = 0.50
0.1 0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
100 Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 15. Avalanche Current vs. Pulse Width
350
TOP
Single Pulse
300
BOTTOM 1.0% Duty Cycle
ID = 195A
250
200
150
100
50
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav  
6 www.irf.com © 2015 International Rectifier
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February 25, 2015

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部品番号部品説明メーカ
IRL7472L1TRPbF

Power MOSFET ( Transistor )

Infineon
Infineon
IRL7472L1TRPbF

N-Channel Power MOSFET / Transistor

International Rectifier
International Rectifier


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