|
|
Número de pieza | ZXMS6003GQ | |
Descripción | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ZXMS6003GQ (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Green
ZXMS6003GQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET®MOSFET WITH PROGRAMMABLE CURRENT LIMIT
Product Summary
• Continuous Drain Source Voltage VDS = 60V
• On-State Resistance
500mΩ
• Nominal Load Current (VIN = 5V) 1.4A
• Clamping Energy
550mJ
Description
Self protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
functionality. Intended as a general purpose switch, with status
indication and programmable current limit.
Applications
• Especially suited for loads with a high in-rush current such as
lamps and motors
• All types of resistive, inductive and capacitive loads in switching
applications
• μC compatible power switch for 12V and 24V DC applications.
• Automotive rated
• Replaces electromechanical relays and discrete circuits
• Linear mode capability - the current-limiting protection circuitry
is designed to de-activate at low VDS, in order not to
compromise the load current during normal operation. The
design max. DC operating current is therefore determined by
the thermal capability of the package/board combination, rather
than by the protection circuitry.
• Note: This does not compromise the product's ability to self-
protect during short-circuit load conditions
• The current limit is programmable via an external resistor Rprog
connected between Status and IN pins
• Status pin voltage reflects the gate drive being applied internally
to the power MOSFET
• With VIN = 5V and Rprog = 24kΩ:
Status voltage: 5V indicates normal operation.
Status voltage: (2-3)V indicates that the device is in
current-limiting mode.
Status voltage < 1V indicates that the device is in thermal
shutdown.
Features and Benefits
• Current Limit Programmable Via External Resistor
• Status Pin (analog status indication)
• Logic Level Input
• Short Circuit Protection with Auto Restart
• Over Voltage Protection (active clamp)
• Thermal Shutdown with Auto Restart
• Over-Current Protection
• Input Protection (ESD)
• Load Dump Protection (actively protects load)
• High Continuous Current Rating
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable
• Lead-Free Finish; RoHS compliant (Note 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
SOT223
Top View
ote: RPROG must be connected between the Status and IN pins
N
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q100 qualified and are PPAP capable. Automotive, AEC-Q100 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
IntelliFET is a trademark of Diodes Incorporated.
ZXMS6003GQ
Document number: DS33607 Rev. 1 - 2
1 of 9
www.diodes.com
April 2014
© Diodes Incorporated
1 page ZXMS6003GQ
Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.)
Parameter
Static Characteristics
Symbol
Min
Typ
Max Unit
Conditions
Drain-Source Clamp Voltage
Off State Drain Current
Off State Drain Current
Input Threshold Voltage (Note 9)
Input Current
Input Current
Input Current
Static Drain-Source On-State
Resistance
VDS(AZ)
60
70
75
V ID = 10mA
IDSS — 0.1 3 µA VDS = 12V, VIN = 0V
IDSS — 3 15 µA VDS = 32V, VIN = 0V
VIN(th)
1 2.1 —
V VDS = VGS, ID = 1mA
IIN — 0.7 1.2 mA VIN = +5V
IIN — 1.5 2.7 mA VIN = +7V
IIN
—4
7 mA VIN = +10V
RDS(ON) — 520 675 mΩ VIN = 5V, ID = 0.2A
Static Drain-Source On-State
Resistance
RDS(ON) — 385 500 mΩ VIN = 10V, ID = 0.5A
Current Limit (Note 10)
Current Limit (Note 10)
Dynamic Characteristics
ID(LIM)
ID(LIM)
0.2 0.3 0.4
0.7 0.9 1.2
A VIN = 5V, VDS = 10V RPROG = 20k
A VIN = 10V, VDS = 10V, RPROG = 20k
Turn-On Time (VIN to 90% ID)
tON
—
3
10
µs
RPROG = 20k, RL = 22Ω, VIN = 0 to 10V,
VDD = 12V
Turn-Off Time (VIN to 90% ID)
TOFF
—
13
20
µs
RPROG = 20k, RL = 22Ω, VIN = 10V to 0V,
VDD = 12V
Slew Rate On (70 to 50% VDD)
DVDS/dtON
—
8
20
V/µs
RPROG= 20k, RL = 22Ω, VIN = 0 to 10V,
VDD = 12V
Slew Rate Off (50 to 70% VDD)
DVDS/dtON
—
3.2
10
V/µs
RPROG = 20k, RL = 22Ω, VIN = 10V to 0V,
VDD = 12V
Protection Functions (Note 10)
Required Input Voltage for Over
Temperature Protection
VPROT 4.5 — — V
Thermal Overload Trip Temperature
Thermal hysteresis
Unclamped Single Pulse Inductive
Energy TJ = +25°C
Unclamped Single Pulse Inductive
Energy TJ = +150°C
Status Flag
TJT
—
EAS
EAS
150 175
—1
—
—
°C
°C
550 —
— mJ ID(ISO) = 0.7A, VDD = 32V
200 —
— mJ ID(ISO) = 0.7A, VDD = 32V
Normal Operation
Current Limit Operating
Thermal Shutdown Activated
Normal Operation
Current Limit Operation
Thermal Shutdown Activated
Inverse Diode
VSTATUS — 4.95 —
VSTATUS
—
2.5
—
VSTATUS
—
0.2
1
VSTATUS
—
8
—
VSTATUS
—
3
—
VSTATUS — 0.35
1
V VIN = 5V
V VIN = 5V
V VIN = 5V
V VIN = 10V
V VIN = 10V
V VIN = 10V
Source Drain Voltage
VSD — — 1 V VIN = 0V, -ID = 1.4A,
Notes:
9. Protection features may operate outside spec for VIN<4.5V
10. The drain current is limited to a reduced value when Vds exceeds a safe level.
11. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are
considered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation.
IntelliFET is a trademark of Diodes Incorporated.
ZXMS6003GQ
Document number: DS33607 Rev. 1 - 2
5 of 9
www.diodes.com
April 2014
© Diodes Incorporated
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet ZXMS6003GQ.PDF ] |
Número de pieza | Descripción | Fabricantes |
ZXMS6003G | N-channel self protected enhancement mode IntelliFET MOSFET | Zetex Semiconductors |
ZXMS6003GQ | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | Diodes |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |