|
|
3LN01CのメーカーはON Semiconductorです、この部品の機能は「N-Channel Small Signal MOSFET」です。 |
部品番号 | 3LN01C |
| |
部品説明 | N-Channel Small Signal MOSFET | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと3LN01Cダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Ordering number : EN6260C
3LN01C
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7Ω, Single CP
http://onsemi.com
Features
• Low ON-resistance
• Ultrahigh-speed switching
• 2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
30
±10
0.15
0.6
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
2.9 0.1 3LN01C-TB-E
3 3LN01C-TB-H
Ordering & Package Information
Device
Package
Shipping
3LN01C-TB-E
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
3LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
memo
Pb-Free
Pb-Free
and
Halogen Free
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CP
Packing Type: TB
TB
Marking
YA
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
1 Page 3LN01C
ID -- VDS
0.16
0.14 3.5V
0.12 4.0V
0.10
2.0V
0.08
VGS=1.5V
0.06
0.04
0.02
0
0
0.2 0.4
0.6 0.8
1.0
Drain to Source Voltage, VDS -- V IT00029
RDS(on) -- VGS
10
Ta=25°C
9
8
7
6 ID=80mA
5 40mA
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
Gate to Source Voltage, VGS -- V IT00031
RDS(on) -- ID
10
VGS=2.5V
7
5 Ta=75°C
25°C
--25°C
3
2
1.0
0.01
7
23
5 7 0.1
23
Drain Current, ID -- A
RDS(on) -- Ta
5 7 1.0
IT00033
6
5
4
3
I D=ID40=m80Am, AV,GVS=G2S.=54V.0V
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00035
0.30
VDS=10V
0.25
ID -- VGS
0.20
0.15
0.10
0.05
0
0
10
7
5
3
2
0.5 1.0
1.5 2.0
2.5 3.0
Gate to Source Voltage, VGS -- V
RDS(on) -- ID
IT00030
VGS=4V
Ta=75°C
25°C
--25°C
1.0
0.01
100
7
5
3
2
23
5 7 0.1
23
Drain Current, ID -- A
RDS(on) -- ID
5 7 1.0
IT00032
VGS=1.5V
10
7
5
3
2
1.0
0.001
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01
Ta=75°C
--25°C
25°C
23
5 7 0.01
23
Drain Current, ID -- A
| yfs | -- ID
5 7 0.1
IT00034
VDS=10V
Ta= --25°C
75°C
25°C
23
5 7 0.1
23
Drain Current, ID -- A
5 7 1.0
IT00036
No.6260-3/6
3Pages 3LN01C
Note on usage : Since the 3LN01C is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.6260-6/6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ 3LN01C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
3LN01C | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
3LN01C | N-Channel Small Signal MOSFET | ON Semiconductor |
3LN01M | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
3LN01M | Small Signal MOSFET | ON Semiconductor |