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IRG7PG42UD-EPbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG7PG42UD-EPbF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG7PG42UD-EPbFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
IRG7PG42UDPbF
IRG7PG42UD-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-free package
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
C
G
E
n-channel
C
VCES = 1000V
IC = 45A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.7V @ IC = 30A
C
GCE
IRG7PG42UDPbF
TO-247AC
GC E
IRG7PG42UD-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG42UDPbF
IRG7PG42UD-EPbF
TO-247AC
TO-247AD
Tube
Tube
25 IRG7PG42UDPbF
25 IRG7PG42UD-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
1000
V
85
45
90
120 A
85
45
120
±30 V
320 W
130
-55 to +150
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
RθCS
Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.39
0.56
–––
40
Units
°C/W
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April 29, 2014
1 Page IRG7PG42UDPbF/IRG7PG42UD-EPbF
60
For both:
50
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
40 Power Dissipation = 95W
30
20
10
0
0.1
100
1
f , Frequency ( kHz )
10
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
350
100
300
80
250
60 200
40 150
100
20
50
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
1000
1000
100
10µsec
10
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
100
VCE (V)
100µsec
1msec
1000 10000
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE = 15V
3 www.irf.com © 2014 International Rectifier
100
10
1
10
100 1000
VCE (V)
10000
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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April 29, 2014
3Pages 50
RG =
40
RG =
30
20
RG =
RG =
IRG7PG42UDPbF/IRG7PG42UD-EPbF
40
35
30
25
10
15 20 25 30 35 40 45 50 55 60
IF (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
40
35
30
25
20
0
200 400 600 800 1000 1200
diF /dt ( A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C
3500
3000
2500
RG = 5.0
RG = 10
RG = 47
RG = 100
20
0
20 40 60 80 100
RG (
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
9000
8000
7000
6000
5000
4000
3000
60A
30A
15A
2000
0
200 400 600 800 1000 1200 1400
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
2000
1500
1000
500
15 20 25 30 35 40 45 50 55 60
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
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April 29, 2014
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRG7PG42UD-EPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |