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IRG7PG42UD-EPbF の電気的特性と機能

IRG7PG42UD-EPbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG7PG42UD-EPbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG7PG42UD-EPbF Datasheet, IRG7PG42UD-EPbF PDF,ピン配置, 機能
  IRG7PG42UDPbF
IRG7PG42UD-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
 Low VCE (ON) trench IGBT technology
 Low switching losses
 Square RBSOA
 100% of the parts tested for ILM
 Positive VCE (ON) temperature co-efficient
 Ultra fast soft recovery co-pak diode
 Tight parameter distribution
 Lead-free package
Benefits
 High efficiency in a wide range of applications
 Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses
 Rugged transient performance for increased reliability
 Excellent current sharing in parallel operation
Applications
 U.P.S. 
 Welding 
 Solar Inverter 
 Induction heating 
 C
G
E
n-channel
C
 
VCES = 1000V
IC = 45A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.7V @ IC = 30A
C
GCE
IRG7PG42UDPbF
TO-247AC
 
GC E
IRG7PG42UD-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG42UDPbF
IRG7PG42UD-EPbF
TO-247AC
TO-247AD
Tube
Tube
25 IRG7PG42UDPbF
25 IRG7PG42UD-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
  
Max.
Units
1000
V
85
45
90
120 A
85
45
120
±30 V
320 W
130
-55 to +150
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
RθCS
Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
 
Typ.
–––
–––
0.24
–––
 
Max.
0.39
0.56
–––
40
 
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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April 29, 2014

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IRG7PG42UD-EPbF pdf, ピン配列
  IRG7PG42UDPbF/IRG7PG42UD-EPbF
60
For both:
50
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
40 Power Dissipation = 95W
30
20
10
0
0.1
100
1
f , Frequency ( kHz )
10
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
350
100
300
80
250
60 200
40 150
100
20
50
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
1000
1000
100
10µsec
10
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
100
VCE (V)
100µsec
1msec
1000 10000
Fig. 4 - Forward SOA
TC = 25°C, TJ 150°C; VGE = 15V
3 www.irf.com © 2014 International Rectifier
100
10
1
10
100 1000
VCE (V)
10000
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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April 29, 2014


3Pages


IRG7PG42UD-EPbF 電子部品, 半導体
 
50
RG = 
40
RG = 
30
20
RG = 
RG = 
IRG7PG42UDPbF/IRG7PG42UD-EPbF
40
35
30
25
10
15 20 25 30 35 40 45 50 55 60
IF (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
40
35
30
25
20
0
200 400 600 800 1000 1200
diF /dt ( A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C
3500
3000
2500
RG = 5.0
RG = 10
RG = 47
RG = 100
20
0
20 40 60 80 100
RG (
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
9000
8000
7000
6000
5000
4000
3000

60A



30A
15A
2000
0
200 400 600 800 1000 1200 1400
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
2000
1500
1000
500
15 20 25 30 35 40 45 50 55 60
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
6 www.irf.com © 2014 International Rectifier
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April 29, 2014

6 Page



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部品番号部品説明メーカ
IRG7PG42UD-EPbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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