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PDF IRG6S320UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG6S320UPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD -96218A
IRG6S320UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
330
VCE(ON) typ. @ IC = 24A
IRP max @ TC= 25°C
TJ max
1.45
160
150
CC
V
V
A
°C
G
E
n-channel
E
G
D2Pak
IRG6S320UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
dRθJC Junction-to-Case
Max.
±30
50 f
25
160
114
45
0.91
-40 to + 150
300
Typ.
–––
Max.
1.1
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
09/11/09
1 page  
IRG6S320UPbF
10000
1000
VGS = 0V, f = 1 MHZ
Cies = Cge + Cgd, Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
100
Coes
Cres
10
0
50 100 150
VCE, Collector-toEmitter-Voltage(V)
200
16
IC = 12A
14
VCES = 240V
12 VCES = 150V
10 VCES = 60V
8
6
4
2
0
0 10 20 30 40
Q G, Total Gate Charge (nC)
50
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.04220
0.30593
τ4τ4 0.50336
τi (sec)
0.000027
0.000129
0.001257
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
CiC= iτi/Ri/iRi
0.001
0.01
0.25017 0.007858
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG6S320UPBF.PDF ] | |
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