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IRG4PSH71UDPBF の電気的特性と機能

IRG4PSH71UDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4PSH71UDPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4PSH71UDPBF Datasheet, IRG4PSH71UDPBF PDF,ピン配置, 機能
PD - 95908
IRG4PSH71UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Copack IGBT
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
C
VCES = 1200V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
G
VCE(on) typ. = 2.52V
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
E
n-channel
@VGE = 15V, IC = 50A
same footprint TO-247
• Creepage distance increased to 5.35mm
• Lead-Free
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
SUPER - 247
multiple, paralleled IGBTs
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
IF @ Tc = 100°C
IFM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
ÙPulse Collector Current
dClamped Inductive Load current
Gate-to-Emitter Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
1200
99
50
200
200
±20
70
200
350
140
-55 to +150
V
A
V
W
°C
Storage Temperature Range, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
RθJA
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Wt Weight
Min.
–––
–––
–––
–––
20 (2.0)
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.36
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
www.irf.com
1
09/20/04

1 Page





IRG4PSH71UDPBF pdf, ピン配列
IRG4PSH71UDPbF
40
30
20
Square wave:
60% of rated
voltage
10
Ideal diodes
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include
effects of
reverse recovery
Power Dissipation = 58W
0
0.1 1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0
VGE= 15V
< 60µs PULSE WIDTH
1234
VCE , Collector-to-Emitter Voltage (V)
5
Fig. 2 - Typical Output Characteristics
www.irf.com
1000.0
100.0
10.0
TJ = 150°C
1.0
0.1
4
TJ = 25°C
VCC = 50V
< 60µs PULSE WIDTH
68
VGE, Gate-to-Emitter Voltage (V)
10
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4PSH71UDPBF 電子部品, 半導体
IRG4PSH71UDPbF
70
RG = 5.0
60 TJ = 150°C
VGE = 15V
50 VCC = 960V
40
30
20
10
0
20
40 60 80 100 120 140 160
IC, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
1000
VGE = 20V
TJ = 125°
100
SAFE OPERATING AREA
10
1
1
10
100
1000
10000
VCE, Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Forward Voltage Drop - V F ( V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRG4PSH71UDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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