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PDF IRG4PH40UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4PH40UPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 95187
IRG4PH40UPbF
INSULATEDGATEBIPOLARTRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• Optimized for power conversion; SMPS, UPS
and welding
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs
C
G
E
n-channel
Ultra Fast Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
1200
41
21
82
82
± 20
270
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
04/26/04
1 page  
4000
3000
2000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
1000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH40UPbF
20 VCC = 400V
I C = 21A
16
12
8
4
0
0 20 40 60 80 100
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.0 VCC = 960V
VGE
TJ
=
=
15V
25 °
C
4.8 IC = 21A
4.6
4.4
4.2
4.0
0
10 20 30 40
RGRG, G, aGtaeteRReseissistatannccee((OΩhm) )
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100 RG =1O0hΩm
VGE = 15V
VCC = 960V
10
1
IC = 42 A
IC = 21 A
IC =10.5 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRG4PH40UPBF.PDF ] | |
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