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Número de pieza | IRG4PC50UPBF | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UPbF
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
C
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
55
27
220
220
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
----
0.24
----
6 (0.21)
Max.
0.64
----
40
----
Units
°C/W
g (oz)
1
04/26/04
1 page IRG4PC50UPbF
8000
V
C
G
ie
E
s
=
=
0V,
C ge
+
f = 1MHz
C gc , C ce
SHORTED
C res = C gc
C oes = C ce + C gc
6000 C ie s
4000
C oes
2000 Cres
0A
1 10 100
VC E , C o lle cto r-to -E m itte r V o ltag e (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20 VCE = 400V
IC = 27A
16
12
8
4
0
0 40 80 120 160
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
200
2.2 VCC = 480V
2.0
VGE = 15V
TJ = 25°C
IC = 27A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
A
10 20 30 40 50 60
R G, Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 R G = 5 .0 Ω
V GE = 15V
V CC = 480V
1
IC = 5 4A
IC = 27A
IC = 1 4 A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRG4PC50UPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4PC50UPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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