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IRG4PC40FPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG4PC40FPBF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4PC40FPBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
PD -95430
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40FPbF
Fast Speed IGBT
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
C
G
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 27A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
49
27
200
200
± 20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Typ.
0.24
6 (0.21)
Max.
0.77
40
Units
°C/W
g (oz)
1
06/17/04
1 Page IRG4PC40FPbF
80
60
Square wave:
40 60% of rated
voltage
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 35W
Triangular wave:
Clamp voltage:
80% of rated
20
Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
1000
1000
TJ = 25°C
100
TJ = 150°C
10
100
TJ = 150°C
TJ = 25°C
10
VGE = 15V
1 20µs PULSE WIDTH A
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
V CC = 50V
1 5µs PULSE WIDTH A
5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
www.irf.com
3
3Pages IRG4PC40FPbF
10
RG = 10Ω
T J = 150°C
VCC = 480V
8 VGE = 15V
6
4
2
0A
0 10 20 30 40 50 60
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGGEE= 20V
TJ = 125°C
100
SAFE OPERATING AREA
10
1
1 10 100 1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRG4PC40FPBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRG4PC40FPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |