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IRG4PC30FDPBF の電気的特性と機能

IRG4PC30FDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4PC30FDPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4PC30FDPBF Datasheet, IRG4PC30FDPBF PDF,ピン配置, 機能
PD - 95556
IRG4PC30FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
• Lead-Free
G
E
n-channel
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Benefits
• Generation -4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
31
17
120
120
12
120
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
1.2
2.5
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1
7/26/04

1 Page





IRG4PC30FDPBF pdf, ピン配列
25
20
15
60% of rated
voltage
10
5
0
0.1
IRG4PC30FDPbF
Duty cycle: 50%
T J = 125°C
TGasitnekd=riv9e0°aCs specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 24W
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
TJ = 25°C
100
TJ = 150°C
10
V GE = 15V
1 20µs PULSE WIDTH A
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150°C
10 TJ = 25°C
V CC = 50V
1 5µs PULSE WIDTH A
5 6 7 8 9 10 11 12 13
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4PC30FDPBF 電子部品, 半導体
IRG4PC30FDPbF
8.0 RG = 23
TJ = 150°C
VCC = 480V
VGE = 15V
6.0
4.0
2.0
1000 VGGEE= 20V
TJ = 125°C
100
SAFE OPERATING AREA
10
0.0
0 10 20 30
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
A
40
100
1
1 10 100 1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
TJ = 150°C
10 TJ = 125°C
TJ = 25°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRG4PC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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