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PDF 1N6100 Data sheet ( Hoja de datos )
| Número de pieza | 1N6100 | |
| Descripción | DIODE ARRAY CIRCUITS | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
1N6100
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
• HERMETIC CERAMIC PACKAGE
• Bv > 75V at 5uA
• Ir < 100nA at 40V
• C < 4.0 pF
Absolute Maximum Ratings:
Symbol
Parameter
Limit Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3 Continuous Forward Current
IFSM *1 Peak Surge Current (tp= 1/120 s)
PT1 *4 Power Dissipation per Junction @ 25°C
PT2 *4 Power Dissipation per Package @ 25°C
Top Operating Junction Temperature Range
Tstg Storage Temperature Range
75 Vdc
300 mAdc
500 mAdc
400 mW
500 mW
-65 to +150 °C
-65 to +200 °C
1 14
2 13
3 12
4 11
5 10
69
78
.019
.010
.280
MAX
.004
MIN
.006
.003
.370
.250
.280
MAX
.260
.240
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
.370
.250
.005
MIN
.050
BSC
.095
.030
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min Max Unit
Vf1 Forward Voltage
If = 100mAdc *1
IR1 Reverse Current
VR = 40 Vdc
IR2 Reverse Current
VR = 20 Vdc
Ct Capacitance (pin to pin) VR = 0 Vdc; f = 1MHz
tfr Forward Recovery Time If = 100mAdc
trr Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
VF5 Forward Voltage Match If = 10 mA
1 Vdc
0.1 uAdc
25 nAdc
4.0 pF
15 ns
10 ns
5 mV
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1015.PDF Rev - 11/25/98
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 1N6100.PDF ] | |
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| 1N6100 | MONOLITHIC AIR ISOLATED DIODE ARRAY | Microsemi Corporation |
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