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BUK962R8-30B の電気的特性と機能

BUK962R8-30BのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel TrenchMOS logic level FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUK962R8-30B
部品説明 N-channel TrenchMOS logic level FET
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BUK962R8-30B Datasheet, BUK962R8-30B PDF,ピン配置, 機能
BUK962R8-30B
N-channel TrenchMOS logic level FET
Rev. 3 — 8 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 3; see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 300 W
- 2 2.4 m
- 2.4 2.8 m

1 Page





BUK962R8-30B pdf, ピン配列
NXP Semiconductors
BUK962R8-30B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 5 V; see Figure 3;
see Figure 1
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
Tmb = 100 °C; VGS = 5 V; see Figure 1
Tmb = 25 °C; pulsed; tp 10 µs;
see Figure 3
Tmb = 25 °C; see Figure 2
Tmb = 25 °C
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; tp 10 µs; Tmb = 25 °C
ID = 75 A; Vsup 30 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Continuous current is limited by package.
Min
-
-
-15
[1] -
[2] -
[2] -
-
Max Unit
30 V
30 V
15 V
237 A
75 A
75 A
950 A
- 300 W
-55 175 °C
-55 175 °C
[3] -
[1] -
-
75 A
237 A
950 A
- 2.3 J
BUK962R8-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
3 of 14


3Pages


BUK962R8-30B 電子部品, 半導体
NXP Semiconductors
BUK962R8-30B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VGS = 15 V; VDS = 0 V; Tj = 25 °C
VGS = -15 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 24 V; VGS = 5 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 ; VGS = 5 V;
RG(ext) = 10 ; Tj = 25 °C
from upper edge of drain mounting base
to centre of die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
Min Typ Max Unit
30 -
-
27 -
-
1.1 1.5 2
V
V
V
0.5 - - V
- - 2.3 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
- 2 100 nA
- - 5.3 m
- 2 2.4 m
- - 3 m
- 2.4 2.8 m
- 89 - nC
- 22 - nC
- 35 - nC
- 7640 10185 pF
- 1600 1920 pF
- 735 1006 pF
- 71 - ns
- 222 - ns
- 260 - ns
- 195 - ns
- 2.5 - nH
- 4.5 - nH
- 7.5 - nH
BUK962R8-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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部品番号部品説明メーカ
BUK962R8-30B

N-channel TrenchMOS logic level FET

NXP Semiconductors
NXP Semiconductors


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