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BUK962R8-30BのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel TrenchMOS logic level FET」です。 |
部品番号 | BUK962R8-30B |
| |
部品説明 | N-channel TrenchMOS logic level FET | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBUK962R8-30Bダウンロード(pdfファイル)リンクがあります。 Total 14 pages
BUK962R8-30B
N-channel TrenchMOS logic level FET
Rev. 3 — 8 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 3; see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 300 W
- 2 2.4 mΩ
- 2.4 2.8 mΩ
1 Page NXP Semiconductors
BUK962R8-30B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; see Figure 3;
see Figure 1
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
Tmb = 100 °C; VGS = 5 V; see Figure 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 3
Tmb = 25 °C; see Figure 2
Tmb = 25 °C
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; tp ≤ 10 µs; Tmb = 25 °C
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Continuous current is limited by package.
Min
-
-
-15
[1] -
[2] -
[2] -
-
Max Unit
30 V
30 V
15 V
237 A
75 A
75 A
950 A
- 300 W
-55 175 °C
-55 175 °C
[3] -
[1] -
-
75 A
237 A
950 A
- 2.3 J
BUK962R8-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
3 of 14
3Pages NXP Semiconductors
BUK962R8-30B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VGS = 15 V; VDS = 0 V; Tj = 25 °C
VGS = -15 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 24 V; VGS = 5 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
from upper edge of drain mounting base
to centre of die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
Min Typ Max Unit
30 -
-
27 -
-
1.1 1.5 2
V
V
V
0.5 - - V
- - 2.3 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
- 2 100 nA
- - 5.3 mΩ
- 2 2.4 mΩ
- - 3 mΩ
- 2.4 2.8 mΩ
- 89 - nC
- 22 - nC
- 35 - nC
- 7640 10185 pF
- 1600 1920 pF
- 735 1006 pF
- 71 - ns
- 222 - ns
- 260 - ns
- 195 - ns
- 2.5 - nH
- 4.5 - nH
- 7.5 - nH
BUK962R8-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
6 of 14
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部品番号 | 部品説明 | メーカ |
BUK962R8-30B | N-channel TrenchMOS logic level FET | NXP Semiconductors |