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PDF NTMD4102PR2 Data sheet ( Hoja de datos )
| Número de pieza | NTMD4102PR2 | |
| Descripción | Trench Power MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTMD4102PR2
Product Preview
Trench Power MOSFET
-20 V, P-Channel, SO-8 Dual
This P-Channel device was designed using ON Semiconductor’s
leading edge trench technology for low RDS(on) performance in the
SO-8 dual package for high power and current handling capability.
The low RDS(on) performance is particularly suited for game systems,
notebook and desktop computers, and printers.
Features & Benefits
• Leading -20 V Trench for Low RDS(on)
• SO-8 Package Provides Excellent Thermal Performance
• Surface Mount SO-8 Package Saves Board Space
• Pb Free Package for Green Manufacturing
Applications
• Load/Power Management
• Battery Switching for Multi Cell Li-Ion
• Buck-Boost Synchronous Rectification
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
- Continuous @ TA = 25°C (Note 1)
- Pulsed Drain Current (t = 10 µs)
Steady State Power Dissipation
@ TA = 25°C (Note 1)
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
-20
±20
-6.5
-30
1.1
-55 to
150
V
V
A
W
°C
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
IS -0.9 A
TL 260 °C
THERMAL RESISTANCE RATINGS
Thermal Resistance
- Junction- to- Ambient - Steady State (Note 1)
- Junction-to-Ambient - t ≤ 10 s (Note 1)
- Junction-to-Lead - Steady State (Note 2)
RqJA
RqJA
RqJL
TBD
TBD
TBD
°C/W
1. Surface-mounted on FR4 board using 1″ sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = TBD in sq)
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
VBR(DSS) = -20 VOLTS
RDS(on) (max) = 19 mW @ -10 V
ID(max) (Note 1) = -8.5 A
RDS(on) (max) = 30 mW @ -4.5 V
ID(max) (Note 1) = -6.5 A
P-Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
8
1
SO-8
CASE 751
STYLE 12
Source-1
Gate-1
Source-2
Gate-2
18
Drain-1
Drain-1
Drain-2
Drain-2
Top View
XXX
A
L
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMD4102PR2
SO-8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number:
NTMD4102PR2/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NTMD4102PR2.PDF ] | |
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