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PDF PMEG3020CPA Data sheet ( Hoja de datos )
| Número de pieza | PMEG3020CPA | |
| Descripción | dual MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG3020CPA
2 A low VF dual MEGA Schottky barrier rectifier
Rev. 1 — 24 August 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 30 V
Low forward voltage
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
AEC-Q101 qualified
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
IF(AV)
average forward
current
square wave;
δ = 0.5; f = 20 kHz
Tamb ≤ 75 °C
[1] - - 2
Tsp ≤ 135 °C
--2
VR reverse voltage
- - 30
VF
forward voltage
IF = 2 A
- 410 440
IR
reverse current
VR = 30 V
- 485 2000
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA
1 page  
NXP Semiconductors
PMEG3020CPA
2 A low VF dual MEGA Schottky barrier rectifier
102
duty cycle =
Zth(j-a)
(K/W)
1
0.5
0.25
0.75
0.33
0.2
10
0.1
0.05
0.02
0 0.01
006aac417
1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 100 mA
IF = 1 A
IF = 2 A
IR
reverse current
VR = 10 V
VR = 30 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
trr reverse recovery time
Min Typ
- 220
- 335
- 410
- 120
- 485
- 170
- 60
[1] -
50
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
-
370
440
-
2000
-
-
-
Unit
mV
mV
mV
μA
μA
pF
pF
ns
PMEG3020CPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
11. Soldering
1.05
2.3 0.6 0.55
PMEG3020CPA
2 A low VF dual MEGA Schottky barrier rectifier
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×) 0.6 (2×)
0.25
1.1
1.2
0.25 0.25
0.4
0.5
1.6
solder paste = solder lands
1.7
solder resist
occupied area
Dimensions in mm
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 16. Reflow soldering footprint SOT1061
PMEG3020CPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2010
© NXP B.V. 2010. All rights reserved.
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