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PDF BYV25FB-600 Data sheet ( Hoja de datos )
| Número de pieza | BYV25FB-600 | |
| Descripción | Enhanced ultrafast power diode | |
| Fabricantes | NXP Semiconductors | |
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BYV25FB-600
Enhanced ultrafast power diode
Rev. 02 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast power diode in a SOT404 (D2PAK) plastic package
1.2 Features and benefits
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery characteristic
Surface-mountable package
1.3 Applications
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VRRM
IF(AV)
repetitive peak
reverse voltage
average forward
current
square-wave pulse; δ = 0.5 ;
Tmb ≤ 126 °C; see Figure 1;
see Figure 2
Static characteristics
VF forward voltage IF = 5 A; Tj = 25 °C;
see Figure 5
IF = 5 A; Tj = 150 °C;
see Figure 5
Dynamic characteristics
trr reverse recovery IF = 1 A; VR = 30 V;
time dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 6
Min Typ Max Unit
- - 600 V
- - 5A
- 1.3 1.9 V
- 1.1 1.7 V
- 17.5 35 ns
1 page  
NXP Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
IF = 5 A; Tj = 25 °C; see Figure 5
IF = 5 A; Tj = 150 °C; see Figure 5
VR = 600 V; Tj = 100 °C
VR = 600 V; Tj = 25 °C
Qr
trr
IRM
VFRM
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 6
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 6
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 6
IF = 1 A; dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 7
Min Typ Max Unit
- 1.3 1.9 V
- 1.1 1.7 V
- - 1.5 mA
- - 50 µA
- 13 - nC
- 17.5 35 ns
- 1.5 - A
- 3.2 - V
20
IF
(A)
16
003aaf445
12
(1) (2) (3)
8
4
0
0123
VF (A)
Vo = 1.50 V; Rs = 0.041 Ω
(1) Tj = 150 °C; typical values;
(2) Tj = 150 °C; maximum values;
(3) Tj = 25 °C; maximum values;
Fig 5. Forward current as a function of forward
voltage
IF
dlF
dt
trr
Qr
IR IRM
time
25 %
100 %
003aac562
Fig 6. Reverse recovery definitions; ramp recovery
BYV25FB-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 March 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BYV25FB-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 March 2011
© NXP B.V. 2011. All rights reserved.
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