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NTB30N06 の電気的特性と機能

NTB30N06のメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 NTB30N06
部品説明 Power MOSFET ( Transistor )
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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NTB30N06 Datasheet, NTB30N06 PDF,ピン配置, 機能
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 M)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
60
60
VGS
VGS
"20
"30
ID 27
ID 15
IDM 80
PD 88.2
0.59
Operating and Storage Temperature Range
TJ, Tstg –55 to
+175
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 26 A, VDS = 60 Vdc)
EAS
101
Thermal Resistance
– Junction–to–Case
RθJC 1.7
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
30 AMPERES
60 VOLTS
RDS(on) = 42 m
N–Channel
D
G
4
S
4
12
1
2
3
TO–220AB
CASE 221A
STYLE 5
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx30N06
LLYWW
1
Gate
3
Source
NTx30N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx30N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N06
NTB30N06
NTB30N06T4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 0
1
Publication Order Number:
NTP30N06/D

1 Page





NTB30N06 pdf, ピン配列
NTP30N06, NTB30N06
60
VGS = 10 V
50 9 V
40
8V
7V
6.5 V
30 6 V
20 5.5 V
10 5 V
4.5 V
0
01 2 3 4 5 6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
60
VDS 10 V
50
40
30
20 TJ = 25°C
10
TJ = 100°C
0
24
TJ = –55°C
6
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
0.09
0.08 VGS = 10 V
0.07
0.06 TJ = 100°C
0.05
0.04 TJ = 25°C
0.03 TJ = –55°C
0.02
0
0 10 20 30 40 50
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
0.09
0.08 VGS = 15 V
0.07
0.06
0.05 TJ = 100°C
0.04 TJ = 25°C
0.03
0.02 TJ = –55°C
0
60 0 10 20 30 40 50 60
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.2
2
ID = 15 A
VGS = 10 V
1.8
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4 100
1.2
1
0.8
0.6
–50 –25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10
TJ = 100°C
1
0 10 20 30 40 50 60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
http://onsemi.com
3


3Pages


NTB30N06 電子部品, 半導体
NTP30N06, NTB30N06
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
http://onsemi.com
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
NTB30N06

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor
NTB30N06L

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor


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