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IXRFD615X2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXRFD615X2
部品説明 15A Dual Low-Side RF MOSFET Driver
メーカ IXYS
ロゴ IXYS ロゴ 



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IXRFD615X2 Datasheet, IXRFD615X2 PDF,ピン配置, 機能
15 A Dual Low-Side RF MOSFET Driver IXRFD615X2
Description
The IXRFD615X2 is a dual CMOS high-speed, high-current
gate driver specifically designed to drive MOSFETs in Push-
Pull and Class E Push-Pull HF RF applications as well as oth-
er applications requiring ultrafast rise and fall times or short
minimum pulse widths. The IXRFD615X2 can source and
sink 15 A of peak current per driver while producing voltage
rise and fall times of less than 10 ns and minimum pulse
widths of 8 ns. The inputs to the driver are compatible with
TTL or CMOS and are fully immune to latch up over the entire
operating range. Designed with small internal delays, cross
conduction or current shoot-through is virtually eliminated.
The features and wide safety margin in operating voltage and
power make the IXRFD615X2 unmatched in performance
and value.
The surface mount IXRFD615X2 is packaged in a low-
inductance RF package incorporating advanced layout tech-
niques to minimize stray lead inductances for optimum
switching performance. The two drivers are constructed on a
single substrate sharing a common ground via the substrate
and therefore are not capable of ground isolated operation
from each other. An example would be a half-bridge which
requires a high-side floating and a ground referenced driver,
which is not suitable, as compared to a push-pull configura-
tion in which both drivers are ground referenced, making it a
suitable application.
Features
High Peak Output Current
Low Output Impedance
Low Quiescent Supply Current
Low Propagation Delay
High Capacitive Load Capability
Wide Operating Voltage Range
Applications
RF MOSFET Driver
Push-Pull RF Generators
Multi-MHz Switch Mode Supplies
Pulse Transformer Driver
Pulse Laser Diode Driver
Pulse Generator
Fig. 1 Block Diagram and Truth Table per Driver
IN OUT
00
11
1

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15A Dual Low-Side RF MOSFET Driver

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