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BYW29E-100のメーカーはNXP Semiconductorsです、この部品の機能は「Ultrafast power diode」です。 |
部品番号 | BYW29E-100 |
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部品説明 | Ultrafast power diode | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBYW29E-100ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
BYW29E-100
Ultrafast power diode
17 September 2013
Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
• Fast switching
• Guaranteed ESD capability
• High thermal cycling performance
• Low on-state loss
• Low thermal resistance
• Rugged: reverse voltage surge capability
• Soft recovery minimizes power-consuming oscillations
3. Applications
• Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 150 °C; Fig. 4
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7
Electrostatic discharge
VESD
electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ
voltage
Min Typ Max Unit
- - 100 V
- - 8A
- 0.8 0.895 V
- 20 25 ns
- - 8 kV
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1 Page NXP Semiconductors
BYW29E-100
Ultrafast power diode
Symbol
Parameter
Conditions
IRSM
non-repetitive peak reverse
current
tp = 100 µs
Tstg storage temperature
Tj junction temperature
Electrostatic discharge
VESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ
12
Ptot
(W)
8
4
003aaj507
δ=1
0.2
0.1
0.5
8
Ptot
(W)
6
4
2
Min Max Unit
- 0.2 A
-40 150 °C
- 150 °C
- 8 kV
003aaj508
a = 1.57
1.9
2.2
2.8
4.0
0
0 4 8 12
IF(AV) (A)
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
02468
IF(AV) (A)
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
8. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 3
in free air
Min Typ Max Unit
- - 2.7 K/W
- 60 - K/W
BYW29E-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 September 2013
© NXP N.V. 2013. All rights reserved
3 / 10
3Pages NXP Semiconductors
BYW29E-100
Ultrafast power diode
IF IF
IF trr
time
0.25 x IR
VF
Qr
IR
IR
003aac563
Fig. 8. Reverse recovery definitions; step recovery
Fig. 9. Forward recovery definitions
time
VFRM
VF
time
001aab912
BYW29E-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 September 2013
© NXP N.V. 2013. All rights reserved
6 / 10
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部品番号 | 部品説明 | メーカ |
BYW29E-100 | Ultrafast power diode | NXP Semiconductors |