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HSMS-2825 の電気的特性と機能

HSMS-2825のメーカーはAVAGOです、この部品の機能は「Surface Mount RF Schottky Barrier Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 HSMS-2825
部品説明 Surface Mount RF Schottky Barrier Diodes
メーカ AVAGO
ロゴ AVAGO ロゴ 




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HSMS-2825 Datasheet, HSMS-2825 PDF,ピン配置, 機能
HSMS-282x
Surface Mount RF Schottky ­Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifica­tions and package con­figura­tions to
give the d­ esigner wide flexib­ ility. Typical applications of
these Schottky diodes are mixing, detecting, switching,
sampling, clamping, and wave shaping. The HSMS‑282x
series of diodes is the best all-around choice for most
applications, featuring low series resistance, low forward
voltage at all current levels and good RF characteristics.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Package Lead Code Identification,
SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
Features
Low Turn-On Voltage (As Low as 0.34 V at 1 mA)
Low FIT (Failure in Time) Rate*
Six-sigma Quality Level
Single, Dual and Quad Versions
Unique Configurations in Surface Mount SOT-363 Package
– increase flexibility
– save board space
– reduce cost
HSMS-282K Grounded Center Leads Provide up to 10
dB Higher Isolation
Matched Diodes for Consistent Performance
Better Thermal Conductivity for Higher Power Dissipation
Lead-free Option Available
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
654
UNCONNECTED
TRIO
654
1 #0 2
UNCONNECTED
PAIR
34
1 #2 2
RING
QUAD
34
1 #3 2
BRIDGE
QUAD
34
1 #4 2
CROSS-OVER
QUAD
34
123
K
COMMON
CATHODE QUAD
654
123
L
COMMON
ANODE QUAD
654
1 #5 2
1 #7 2
1 #8 2
Package Lead Code Identification, SOT-323
(Top View)
SINGLE
SERIES
1 #9 2
B
COMMON
ANODE
C
COMMON
CATHODE
1 2M 3
BRIDGE
QUAD
654
1 2P 3
1 2N 3
RING
QUAD
654
1 2R 3
EF

1 Page





HSMS-2825 pdf, ピン配列
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiv‑
alent to the capaci­tance of the diode by itself. The equiv‑
alent diagonal and adja­cent capaci-tances can then be
calculated by the formulas given below.
In a quad, the diagonal capacit­ ance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
C DIAGONAL = _C_1_x__C_2_ + _C__3_x_C__4
C1 + C2 C3 + C4
TbtCaChenDAetcIwDAeJeGAeOqCiesNEunNAciTLvapal=co=leui_nCCCnl_at1t11_st+xe+_aAd_CdC__aj_u22a_n_–Csc1+_ide2n_n+_gC_CC_t_–t_1iC133_hnc–__+x3ae_+_tpC_Chf_ao–_Ce1_44cll4ifotiagwnuicnreeg
is the capacitance
below. This capaci‑
formula
C
ADJACENRT
j
==
C8.13+3I
X__1_0__-5_n_T1_____
b +I1s– + –1– + –1–
C2 C3 C4
Tohdiess.infoRrmj =at8io.3n3I
Xd1o0es-5nnoTt
b+Is
apply
to
cross-over
quad
di‑
C1
C
C2
A
C3
C4
B
Linear Equivalent Circuit Model Diode Chip
Rj
RS
Cj
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To e ectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
Parameter
Units
BV V
CJ0 pF
EG eV
IBV A
IS A
N
RS Ω
PB V
PT
M
HSMS-282x
15
0.7
0.69
1E - 4
2.2E-8
1.08
6.0
0.65
2
0.5
3


3Pages


HSMS-2825 電子部品, 半導体
Thus, p-type diodes are generally reserved for detector
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ktoerespuRseVdloiwn )g. aDinC
biased detectors and self-biased
or power control circuits.
detec‑
Detector Applications
Detector circuits can be divided into two types, large signal
(tPhien
> ‑20 dBm)
former use
arensdisstmivealilmsipgendaal (nPcine<m‑a2t0cdhiBnmg)a. tInthgeenineprault,
to improve flatness over frequency — this is possible since
the input signal levels are high enough to produce ade‑
quate output voltages without the need for a high Q reac‑
tive input matching network. These circuits are self-biased
(no external DC bias) and are used for gain and power
control of amplifiers.
Small signal detectors are used as very low cost receivers,
and require a reactive input impedance matching net‑
work to achieve adequate sensitivity and output voltage.
Those operating with zero bias utilize the HSMS‑ 285x
family of detector diodes. However, superior performance
over temperature can be achieved with the use of 3 to 30
µA of DC bias. Such circuits will use the HSMS‑282x family
of diodes if the operating frequency is 1.5 GHz or lower.
Typical performance of single diode detectors (using
HSMS‑2820 or HSMS‑282B) can be seen in the transfer
curves given in Figures 7 and 8. Such detectors can be re‑
alized either as series or shunt circuits, as shown in Figure
11.
DC Bias
The two diodes are in parallel in the RF circuit, lowering
the input impedance and making the design of the RF
matching network easier.
The two diodes are in series in the output (video)
circuit, doubling the output voltage.
Some cancellation of even‑order harmonics takes place
at the input.
DC Bias
Zero Biased Diodes
DC Biased Diodes
Figure 12. Voltage Doubler.
The most compact and lowest cost form of the doubler is
achieved when the HSMS‑2822 or HSMS-282C series pair
is used.
Both the detection sensitivity and the DC forward voltage
of a biased Schottky detector are temperature sensitive.
Where both must be compensated over a wide range of
temperatures, the differential detector[2] is often used.
Such a circuit requires that the detector diode and the
reference diode exhibit identical characteristics at all DC
bias levels and at all temperatures. This is accomplished
through the use of two diodes in one package, for exam‑
ple the HSMS‑2825 in Figure 13. In the Avago assembly
facility, the two dice in a surface mount package are taken
from adjacent sites on the wafer (as illustrated in Figure
14). This assures that the characteristics of the two diodes
are more highly matched than would be possible through
individual testing and hand matching.
Shunt inductor provides
video signal return
Shunt diode provides
video signal return
DC Bias
RF in RF
impedance
matching
network
RM
RL di erential
ampli er
Video out
Zero Biased Diodes DC Biased Diodes
Figure 11. Single Diode Detectors.
The series and shunt circuits can be combined into a volt‑
age doubler[1], as shown in Figure 12. The doubler offers
three advantages over the single diode circuit.
+3V
Figure 13. Differential Detector.
RL
Notes:
1. Avago Application Note 956‑4, “Schottky Diode Voltage Doubler.”
2. Raymond W. Waugh, “Designing Large‑Signal Detectors for Handsets and Base Stations,” Wireless Systems Design, Vol. 2, No. 7, July 1997, pp 42 – 48.
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
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Surface Mount RF Schottky Barrier Diodes

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HSMS-2820-BLK

Surface Mount RF Schottky Barrier Diodes

Agilent(Hewlett-Packard)
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HSMS-2820-BLK

Surface Mount RF Schottky Barrier Diodes

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