DataSheet.jp

AT-32033 の電気的特性と機能

AT-32033のメーカーはAVAGOです、この部品の機能は「High Performance NPN Silicon Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 AT-32033
部品説明 High Performance NPN Silicon Bipolar Transistor
メーカ AVAGO
ロゴ AVAGO ロゴ 




このページの下部にプレビューとAT-32033ダウンロード(pdfファイル)リンクがあります。

Total 10 pages

No Preview Available !

AT-32033 Datasheet, AT-32033 PDF,ピン配置, 機能
AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT‑23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger inter­digitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla­
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
320x
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320x
BASE EMITTER
SOT-23 (AT-32033)
Notes:
Top View.
Note:
PaTacnkodapgivdeieeMwnat.irfPkicainactgkioapngr.oe"vmxid"aerisskiotnhrgieepndrtaoatvetiidocneosdaeon.rdieidnetanttioifnication.
"x" is the date code.

1 Page





AT-32033 pdf, ピン配列
Characterization Information, TA = 25°C
Symbol Parameters and Test Conditions
Units
P1dB
Power at 1 dB Gain Compression (opt tuning)
  VCE = 2.7 V, IC = 20 mA
G1dB
Gain at 1 dB Gain Compression (opt tuning)
  VCE = 2.7 V, IC = 20 mA
IP3
Output Third Order Intercept Point (opt tuning)
  VCE = 2.7 V, IC = 20 mA
|S21|E2 Gain in 50 Ω System
  VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
dBm
dB
dBm
dB
AT-32011
Typ.
13
16.5
24
13
AT-32033
Typ.
13
15
24
11.5
2 25 20
1.5
1
1 mA
2 mA
5 mA
0.5 10 mA
20 mA
00 0.5 1 1.5 2
FREQUENCY (GHz)
2.5
Figure 2. AT-32011 and AT-32033 Minimum Noise Fig-
ure vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 2
20
15
10
1 mA
2 mA
5 5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
1 mA
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 3. AT-32011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 3
Figure 4. AT-32033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 4
20 20 20
15
10
5
2 mA
0 5 mA
10 mA
20 mA
-50 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 5
Figure 6. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at Vce = 2.7 V.
AT-32011 fig 6
Figure 7. AT-32033 1 dB Compressed Gain vs. Frequen-
cy and Current at Vce = 2.7 V.
AT-32011 fig 7



3Pages


AT-32033 電子部品, 半導体
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.       S11
S21
S12      S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.94
-13 16.67 6.81 170 -35.25 0.017 82 0.99
-6
0.80
-60 15.10 5.69 136 -23.07 0.070 57 0.86 -24
0.67
-97 12.97 4.45 112 -20.34 0.096 41 0.73 -35
0.64 -104 12.48 4.21 107 -20.05 0.099 39 0.70 -37
0.55
-137
10.04
3.18
86
-19.21
0.110
30
0.61
-45
0.51
-154
8.77
2.75
76
-19.04
0.112
28
0.58
-49
0.50
-165
8.13
2.55
70
-18.99
0.112
27
0.56
-52
0.48
176
6.75
2.18
58
-18.84
0.114
27
0.54 -57
0.49
150
4.97
1.77
43
-18.52
0.119
30
0.52 -64
0.54
116
2.73
1.37
22
-16.98
0.142
36
0.50 -77
0.61
92
0.83
1.10
4
-14.50
0.188
37
0.50
-95
30
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq.
Fmin             Γ  op t
GHz
dB Mag Ang
Rn
20
MSG
0.5[1]
0.57
0.69
22 0.30
10
MAG
0.9
0.78
0.60
51 0.25
S21
1.8
1.25
0.42
117 0.14
2.4
1.57
0.44
159 0.08
00 1 2 3 4 5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 19. AT-32011 Gains vs. Frequency at Vce = 2.7 V,
Ic = 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA AT-32011 fig 19
Freq.       S11
S21
S12      S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.93
-13 16.61 6.77 167 -34.89 0.018 82 0.99
-6
0.68
-56 14.29 5.18 127 -23.10 0.070 61 0.83 -22
0.44
-86 11.48 3.75 101 -20.35 0.096 55 0.71 -30
0.39
-93
10.88
3.50
96
-19.91
0.101
54
0.70
-31
0.23
-129
8.16
2.56
76
-17.99
0.126
55
0.64
-36
0.18
-156
6.89
2.21
66
-16.89
0.143
57
0.62
-39
0.16
-176
6.19
2.04
60
-16.14
0.156
57
0.61
-42
0.17
146
4.91
1.76
50
-14.70
0.184
58
0.60 -47
0.22
108
3.35
1.47
36
-12.51
0.237
57
0.58 -56
0.32
76
1.51
1.19
18
-9.19
0.347
51
0.55
-73
0.40
56
0.17
1.02
4
-6.54
0.471
40
0.51
-95
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq.
Fmin             Γ  op t
GHz
dB Mag Ang
0.5[1]
0.57
0.77
15
0.9
0.78
0.63
49
1.8
1.25
0.32
136
2.4
1.57
0.40
-159
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.

Rn
0.36
0.28
0.10
0.08
30
20
MSG
10 MAG
S21
MSG
00 1 2 3 4
FREQUENCY (GHz)
5
Figure 20. AT-32033 Gains vs. Frequency at Vce = 2.7 V,
Ic = 2 mA.
AT-32011 fig 20

6 Page



ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ AT-32033 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
AT-32032

High Performance NPN Silicon Bipolar Transistor

AVAGO
AVAGO
AT-32032-BLK

AT32032

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
AT-32032-TR1

AT32032

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
AT-32033

Low Current/ High Performance NPN Silicon Bipolar Transistor

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap