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10N65-Q の電気的特性と機能

10N65-QのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 10N65-Q
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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10N65-Q Datasheet, 10N65-Q PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
10N65-Q
10A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N65-Q is generally applied in high efficient DC to
DC converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON) < 1.0@ VGS=10V, ID = 5 A
* High Switching Speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N65L-TA3-T
10N65G-TA3-T
TO-220
10N65L-TF3-T
10N65G-TF3-T
TO-220F
10N65L-TF1-T
10N65G-TF1-T
TO-220F1
10N65L-TF2-T
10N65G-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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10N65-Q pdf, ピン配列
10N65-Q
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=30V, ID =0.5A,
RG =25(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=50V, ID=1.3A,
VGS=10 V (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR VGS=0V, IS=10A
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
1 µA
100 nA
-100 nA
2.0 4.0 V
1.0
1500
130
25
pF
pF
pF
60 ns
120 ns
310 ns
180 ns
39 nC
8.0 nC
9.5 nC
1.4 V
10 A
40 A
420 ns
4.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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10N65-Q 電子部品, 半導体
10N65-Q
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

Link :


部品番号部品説明メーカ
10N65-C

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
10N65-Q

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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