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IPS65R1K5CE の電気的特性と機能

IPS65R1K5CEのメーカーはInfineon Technologiesです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPS65R1K5CE
部品説明 MOSFET ( Transistor )
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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IPS65R1K5CE Datasheet, IPS65R1K5CE PDF,ピン配置, 機能
IPS65R1K5CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
1500
m
Id. 5.2 A
Qg.typ
10.5
nC
ID,pulse
8.3
A
Eoss@400V
1.15
µJ
Type/OrderingCode
IPS65R1K5CE
Package
PG-TO 251
Marking
65S1K5CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31

1 Page





IPS65R1K5CE pdf, ピン配列
650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-40
-
-
-
-
Values
Typ. Max.
- 5.2
- 3.3
- 8.3
- 26
- 0.10
- 0.6
- 50
- 20
- 30
- 53
- 150
- 150
- 3.7
- 8.3
- 15
- 500
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=0.6A; VDD=50V; see table 10
mJ ID=0.6A; VDD=50V; see table 10
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
2016-03-31


3Pages


IPS65R1K5CE 電子部品, 半導体
650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
200 -
0.9 -
8-
Unit Note/TestCondition
V VGS=0V,IF=1.5A,Tj=25°C
ns
VR=400V,IF=1.5A,diF/dt=100A/µs;
see table 8
µC
VR=400V,IF=1.5A,diF/dt=100A/µs;
see table 8
A
VR=400V,IF=1.5A,diF/dt=100A/µs;
see table 8
Final Data Sheet
6
2016-03-31

6 Page



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部品番号部品説明メーカ
IPS65R1K5CE

MOSFET ( Transistor )

Infineon Technologies
Infineon Technologies


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