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IPB240N03S4L-R9 の電気的特性と機能

IPB240N03S4L-R9のメーカーはInfineonです、この部品の機能は「Power-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPB240N03S4L-R9
部品説明 Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 




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IPB240N03S4L-R9 Datasheet, IPB240N03S4L-R9 PDF,ピン配置, 機能
IPB240N03S4L-R9
OptiMOS-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on)
ID
30 V
0.92 mW
240 A
PG-TO263-7-3
Type
IPB240N03S4L-R9
Package
PG-TO263-7-3
Marking
4N03LR9
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=120 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
240
240
960
750
190
±16
231
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-28

1 Page





IPB240N03S4L-R9 pdf, ピン配列
IPB240N03S4L-R9
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=100 A, R G=1.6 W
-
-
-
-
-
-
-
15400 20300 pF
3500 4550
160 320
22 - ns
38 -
100 -
98 -
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=24 V, I D=240 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
50 65 nC
25 50
230 300
3.0 - V
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
IS
I S,pulse
T C=25 °C
- - 240 A
- - 960
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
0.9 1.3 V
Reverse recovery time2)
Reverse recovery charge2)
t rr V R=15 V, I F=100A,
Q rr di F/dt =100 A/µs
- 62 - ns
- 100 - nC
1) Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 386A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2014-04-28


3Pages


IPB240N03S4L-R9 電子部品, 半導体
IPB240N03S4L-R9
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
2
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
1.75
1.5
1.25
1800µA
180µA
104
Ciss
1 Coss
0.75
0.5
103
0.25
0
-60 -20 20
60 100 140 180
T j [°C]
0 5 10 15 20
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Typ. avalanche characteristics
I AS = f(t AV)
parameter: Tj(start)
1000
Crss
25 30
102
175 °C 25 °C
101
100
10
25°C
100°C
150°C
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
1
0.1
Rev. 1.1
page 6
1 10 100
t AV [µs]
1000
2014-04-28

6 Page



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部品番号部品説明メーカ
IPB240N03S4L-R8

Power-Transistor

Infineon
Infineon
IPB240N03S4L-R9

Power-Transistor

Infineon
Infineon


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