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IPB120N03S4L-03 の電気的特性と機能

IPB120N03S4L-03のメーカーはInfineonです、この部品の機能は「Power-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPB120N03S4L-03
部品説明 Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 




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IPB120N03S4L-03 Datasheet, IPB120N03S4L-03 PDF,ピン配置, 機能
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• 100% Avalanche tested
IPB120N03S4L-03
Product Summary
V DS
R DS(on),max
ID
30 V
3 mW
120 A
PG-TO263-3-2
Type
IPB120N03S4L-03
Package
PG-TO263-3-2
Ordering Code Marking
- 4N03L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
120
88
480
75
120
±16
79
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-28

1 Page





IPB120N03S4L-03 pdf, ピン配列
IPB120N03S4L-03
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
D-85579 Neubiberg
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
V GS=0V, V DS=25V,
f =1MHz
- 4100 5300 pF
- 900 1200
- 45 90
t d(on)
- 7 - ns
tr
V DD=15V, V GS=10V,
-
24
-
t d(off)
I D=120A, R G=3.5W
-
21
-
t f - 34 -
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
Q gd V DD=24V, I D=120A,
Q g V GS=0 to 10V
-
-
-
13 17 nC
8 16
55 72
Gate plateau voltage
V plateau
- 3.3 - V
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
IS
I S,pulse
V SD
T C=25°C
V GS=0V, I F=100A,
T j=25°C
t rr
V R=15V, I F=I S,
di F/dt =100A/µs
- - 120 A
- - 480
- 0.9 1.3 V
- 85 - ns
Reverse recovery charge2)
Q rr
- 150 - nC
1) Current is limited by bondwire; with an R thJC = 1.9K/W the chip is able to carry 124A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2014-04-28


3Pages


IPB120N03S4L-03 電子部品, 半導体
IPB120N03S4L-03
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
2
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
103
1.75
1.5
1.25
400µA
40µA
Ciss
Coss
102
1
0.75
0.5
Crss
101
0.25
0
-60 -20 20
60 100 140 180
T j [°C]
10
0
5 10 15 20 25 30
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Typ. avalanche characteristics
I AS = f(t AV)
parameter: Tj(start)
1000
102
175 °C 25 °C
101
100
10
25°C
100°C
150°C
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
1
1
Rev. 1.1
page 6
10 100
t AV [µs]
1000
2014-04-28

6 Page



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部品番号部品説明メーカ
IPB120N03S4L-03

Power-Transistor

Infineon
Infineon


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