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7N10Z の電気的特性と機能

7N10ZのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 7N10Z
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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7N10Z Datasheet, 7N10Z PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
7N10Z
7A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N10Z is an N-Channel enhancement mode power
MOSFET providing customers with excellent switching performance
and minimum on-state resistance. The UTC 7N10Z uses planar
stripe and DMOS technology to provide perfect quality. This device
can also withstand high energy pulse in the avalanche and the
commutation mode.
The UTC 7N10Z is generally applied in low voltage applications,
such as DC motor controls, audio amplifiers and high efficiency
switching DC/DC converters.
FEATURES
* RDS(ON) < 0.35@ VGS =10V, ID =3.5A
* Fast Switching
* Improved dv/dt Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N10ZL-TN3-R
7N10ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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7N10Z pdf, ピン配列
7N10Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain -Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
±20 V
Continuous Drain Current TC =25°C
ID
7A
Pulsed Drain Current (Note 2)
IDM
28 A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
Derate above 25°C
EAS
PD
50 mJ
2.5 W
0.02 W/°C
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, IAS =7A, VDD =25V, RG =25Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
Note: When mounted on the minimum pad size recommended (PCB Mount)
50
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0V, ID =250µA
VDS =100V, VGS =0V
VGS =±20V, VDS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID =250µA
VGS =10V, ID =3.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
(Note 1,2)
VDD=30V, ID=0.5A, RG=25
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =7A, VGS =0V
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
100 V
1 µA
±10 µA
2.0 4.0 V
0.145 0.35
420 450
80 100
11 15
pF
pF
pF
9.5
1
2.5
33 40
35 42
94 116
35 40
nC
nC
nC
ns
ns
ns
ns
7A
28 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N10Z 電子部品, 半導体
7N10Z
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source On-State Resistance
Characteristics
4
3.5 VGS=10V, ID=3.5A
3
2.5
2
1.5
1
0.5
0
0 0.2 0.4 0.6 0.8
Drain to Source Voltage, VDS (V)
Maximum Safe Operation Area
100
10
1 10µs
100µs
1ms
0.1 10ms
100ms
TA=25ºC
0.01
0.1
1
DC
10 60
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

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部品番号部品説明メーカ
7N10

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
7N10Z

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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