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12N65 の電気的特性と機能

12N65のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 12N65
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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12N65 Datasheet, 12N65 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
12N65
12A, 650V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power field
effect transistors (MOSFET) which are produced by using UTC’s
proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance and withstand high energy pulse in the avalanche and
commutation mode, the advanced technology has been especially
tailored.
„ FEATURES
* RDS(ON) < 0.85@VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N65L-TA3-T
12N65G-TA3-T
12N65L-TF1-T
12N65G-TF1-T
12N65L-TF2-T
12N65G-TF2-T
12N65L-TF3-T
12N65G-TF3-T
12N65L-T2Q-T
12N65G-T2Q-T
12N65L-T3P-T
12N65G-T3P-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
TO-3P
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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12N65 pdf, ピン配列
12N65
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 650 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
12 A
12 A
48 A
790 mJ
24 mJ
4.5 V/ns
TO-220 / TO-262
225 W
Power Dissipation
TO-220F / TO-220F1
TO-220F2
PD
51 W
54 W
TO-3P
260 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-262
TO-3P
TO-220 / TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-3P
SYMBOL
θJA
θJC
RATING
62.5
40
0.56
2.43
2.31
0.48
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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12N65 電子部品, 半導体
12N65
„ TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
10V
RD
tp
L
VDS
BVDSS
IAS
VDD
D.U.T.
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ページ 合計 : 8 ページ
 
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