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10N70 の電気的特性と機能

10N70のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 10N70
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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10N70 Datasheet, 10N70 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
10N70
10A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N70 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) <1.2@ VGS = 10V, ID = 5A
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N70L-TF1-T
10N70G-TF1-T
10N70L-TF2-T
10N70G-TF2-T
10N70L-TF3-T
10N70G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
TO-220F
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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10N70 pdf, ピン配列
10N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 700 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
10 A
10 A
40 A
600 mJ
15.6 mJ
4.5 V/ns
Power Dissipation
Junction Temperature
PD 50 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 12mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25°C
4. ISD 9.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3Pages


10N70 電子部品, 半導体
10N70
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6 Page



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[ 10N70 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
10N70

N-Channel Mosfet Transistor

Inchange Semiconductor
Inchange Semiconductor
10N70

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
10N70-C

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
10N70-Q

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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