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PDF IRFR825TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFR825TRPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96433A
IRFR825TRPbF
HEXFET® Power MOSFET
Applications
• Zero Voltage Switching SMPS
• Uninterruptible Power Supplies
• Motor Control applications
VDSS RDS(on) typ. Trr typ. ID
500V 1.05Ω
92ns 6.0A
D
Features and Benefits
• Fast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Higher Gate voltage threshold offers improved noise
immunity.
S
G
D-Pak
IRFR825TRPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
6.0
3.9
24
119
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
1.0
± 20
9.9
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
300 (1.6mm from case )
Min. Typ. Max. Units Conditions
––– ––– 6.0
MOSFET symbol
A showing the
D
––– ––– 24
––– ––– 1.2
integral reverse
G
fp-n junction diode.
S
V TJ = 25°C, IS = 6.0A, VGS = 0V
––– 92 138
––– 152 228
––– 167 251
––– 292 438
ns TJ = 25°C, IF = 6.0A
fTJ = 125°C, di/dt = 100A/μs
fnC TJ = 25°C, IS = 6.0A, VGS = 0V
fTJ = 125°C, di/dt = 100A/μs
––– 3.6 5.4
fTJ = 25°C, IS = 6.0A, VGS = 0V
A di/dt = 100A/μs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes through are on page 2
www.irf.com
1
12/19/12
1 page  
IRFR825TRPbF
7
6
5
4
3
2
1
0
25
50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
150
2.0
1.8
1.6
1.4
1.2
VGS = 10V
1.0
0.8
0
2 4 6 8 10
ID , Drain Current (A)
12
Fig 9. Typical Rdson Vs. Drain Current
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFR825TRPbF.PDF ] | |
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