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IRFR24N15DPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFR24N15DPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFR24N15DPbFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
PD - 95370B
IRFR24N15DPbF
IRFU24N15DPbF
VDSS
150V
HEXFET® Power MOSFET
RDS(on) max
95mΩ
ID
24A
D-Pak
I-Pak
IRFR24N15DPbF IRFU24N15DPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Max.
24
17
96
140
0.92
± 30
4.9
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
1.1
50
110
Units
°C/W
Notes through
,* are on page 10
www.irf.com
1
09/22/10
1 Page IRFR/U24N15DPbF
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
5.0V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 175 ° C
10
1
0.1
4
TJ = 25 ° C
V DS= 50V
20µs PULSE WIDTH
6 8 10 12
V GS, Gate-to-Source Voltage (V)
14
16
Fig 3. Typical Transfer Characteristics
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3.0 ID = 24A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFR/U24N15DPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
320
ID
TOP 5.9A
10A
BOTTOM
14A
240
160
80
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( ° C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ IRFR24N15DPbF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFR24N15DPbF | Power MOSFET ( Transistor ) | International Rectifier |