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IRFP7537PBF の電気的特性と機能

IRFP7537PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP7537PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFP7537PBF Datasheet, IRFP7537PBF PDF,ピン配置, 機能
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRFP7537PbF
HEXFET® Power MOSFET
  D VDSS
60V
RDS(on) typ.
2.75m
G
max
3.30m
S ID
172A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
GDS
TO-247
IRFP7537PbF
D
Drain
S
Source
Base part number
IRFP7537PbF
Package Type
TO-247
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP7537PbF
12
ID = 100A
10
8
6 TJ = 125°C
4
2 TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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November 18, 2014

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IRFP7537PBF pdf, ピン配列
  IRFP7537PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
142
36
43
99
15
105
82
84
7020
640
395
665
880
Max. Units
Conditions
––– S VDS = 10V, ID =100A
210 ID = 100A
–––
–––
nC
 VVDGSS
=
=
30V
10V
–––
––– VDD = 30V
–––
–––
ns
ID = 100A
RG= 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 25V
––– pF   ƒ = 1.0MHz, See Fig.7
––– VGS = 0V, VDS = 0V to 48V
––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics  
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
172
700
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V 
––– 10 ––– V/ns TJ = 175°C,IS =100A,VDS = 60V
–––
–––
39
41
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 100A,
–––
–––
46
56
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
 
––– 2.1 ––– A TJ = 25°C
3 www.irf.com © 2014 International Rectifier
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November 18, 2014


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IRFP7537PBF 電子部品, 半導体
 
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
IRFP7537PbF
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 15. Avalanche Current vs. Pulse Width
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
250 ID = 100A
200
150
100
50
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav  
6 www.irf.com © 2014 International Rectifier
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November 18, 2014

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部品番号部品説明メーカ
IRFP7537PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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