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PDF IKW50N60TA Data sheet ( Hoja de datos )
| Número de pieza | IKW50N60TA | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IKW50N60TA
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time 5 µs
TRENCHSTOPTM and Fieldstop technology for 600 V
applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Applications:
Main inverter
Air – Con compressor
PTC heater
Motor drives
C
G
E
PG-TO247-3
Type
VCE
IKW50N60TA 600V
IC
50A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K50T60A
Package
PG-TO247-3
IFAG IPC TD VLS
1
Rev. 2.3 17.09.2014
1 page  
IKW50N60TA
TRENCHSTOPTM Series
q
140A
120A
100A
80A
60A
40A
TC=80°C
TC=110°C
Ic
20A
0A
100Hz
Ic
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, RG = 7)
100A
10A
t =2µs
p
10µs
50µs
1ms
1A DC 10ms
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
80A
60A
40A
20A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
5
Rev. 2.3 17.09.2014
5 Page 
IKW50N60TA
TRENCHSTOPTM Series
q
50 A
40 A
Tj =175°C
-900 A/µs
-800 A/µs
-700 A/µs
Tj =25°C
30 A
20 A
10 A
Tj =25°C
-600 A/µs
-500 A/µs
-400 A/µs
-300 A/µs
-200 A/µs
Tj =175°C
0A
900 A/µs
1100 A/µs
1300 A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 50A,
Dynamic test circuit in Figure E)
-100 A/µs
900 A/µs
1100 A/µs 1300 A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=50A,
Dynamic test circuit in Figure E)
120A
100A
80A
T =25°C
J
175°C
60A
40A
20A
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2.0V
I =100A
F
1.5V
1.0V
50A
25A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
IFAG IPC TD VLS
11
Rev. 2.3 17.09.2014
11 Page | ||
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| PDF Descargar | [ Datasheet IKW50N60TA.PDF ] | |
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