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IKW30N60TA の電気的特性と機能

IKW30N60TAのメーカーはInfineonです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IKW30N60TA
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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IKW30N60TA Datasheet, IKW30N60TA PDF,ピン配置, 機能
IKW30N60TA
TrenchStop® Series
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time 5 µs
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Applications:
Main inverter
Air Con compressor
PTC heater
Motor drives
C
G
E
PG-TO247-3
Type
VCE
IKW30N60TA 600V
IC
30A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K30T60A
Package
PG-TO247-3
IFAG IPC TD VLS
1
Rev. 2.3 17.09.2014

1 Page





IKW30N60TA pdf, ピン配列
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
Thermal resistance,
junction ambient
IKW30N60TA
TrenchStop® Series
q
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.80
1.05
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=30A
Tj=25C
Tj=175C
VGE=0V, IF=30A
Tj=25C
Tj=175C
IC=0.43mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.9
1.65
1.6
4.9
-
-
-
16.7
-
Unit
max.
-V
2.05
-
2.05
-
5.7
µA
40
2000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Cies
Coes
Cres
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current
Allowed number of short circuits: <1000; time
between short circuits: >1s.
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=30A
VGE=15V
VGE=15V,tSC5s
VCC = 400V,
Tj = 150C
-
-
-
-
-
-
1630
108
50
167
13
275
- pF
-
-
- nC
- nH
-A
IFAG IPC TD VLS
3
Rev. 2.3 17.09.2014


3Pages


IKW30N60TA 電子部品, 半導体
IKW30N60TA
TrenchStop® Series
q
80A
70A
60A
V =20V
GE
15V
50A 13V
11V
40A
9V
30A 7V
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
V =20V
GE
40A 15V
13V
30A 11V
9V
20A 7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
40A
30A
20A
10A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
2.5V
2.0V
1.5V
1.0V
I =60A
C
IC=30A
I =15A
C
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
6
Rev. 2.3 17.09.2014

6 Page



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部品番号部品説明メーカ
IKW30N60T

IGBT ( Insulated Gate Bipolar Transistor )

Infineon Technologies
Infineon Technologies
IKW30N60TA

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon


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