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PDF 8N65K-MT Data sheet ( Hoja de datos )
| Número de pieza | 8N65K-MT | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
8N65K-MT
Preliminary
8A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N65K-MT is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 1.3 Ω @ VGS = 10 V, ID = 4 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N65KL-TF1-T
8N65KG-TF1-T
8N65KL-TF2-T
8N65KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
8N65KL-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF1: TO-220F1, TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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8N65K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
RL VDS 90%
VDD
D.U.T.
10%
VGS
tD(ON)
tR
Power MOSFET
tD(OFF)
tF
Switching Test Circuit
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-A98.c
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 8N65K-MT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 8N65K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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