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6N70-P の電気的特性と機能

6N70-PのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 6N70-P
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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6N70-P Datasheet, 6N70-P PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
6N70-P
Power MOSFET
6.0A, 700V N-CHANNEL
POWER MOSFET
1
TO-220F
1
TO-220F2
DESCRIPTION
The UTC 6N70-P is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC 6N70-P is universally applied in high efficiency
switch mode power supply.
11
TO-251
TO-251L
1
TO-251S
1
TO-251S2
FEATURES
* RDS(ON) < 1.8@ VGS=10V, ID=3A
* High switching speed
1
TO-251S4
1
TO - 252
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N70L-TF2-T
6N70G-TF2-T
6N70L-TF3-T
6N70G-TF3-T
6N70L-TM3-T
6N70G-TM3-T
6N70L-TMA-T
6N70G-TMA-T
6N70L-TMS-T
6N70G-TMS-T
6N70L-TMS2-T
6N70G-TMS2-T
6N70L-TMS4-T
6N70G-TMS4-T
6N70L-TN3-R
6N70G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F2
TO-220F
TO-251
TO-251L
TO-251S
TO-251S2
TO-251S4
TO-252
Pin Assignment
123
GD S
GD S
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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6N70-P pdf, ピン配列
6N70-P
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage (Note 2)
VDSS
VGSS
700 V
±30 V
Drain Current
Continuous
TC=25°C
TC=100°C
ID
6A
3.8 A
Pulsed
Avalanche Current (Note 2)
IDM 24 A
IAR 6 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
200 mJ
13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.5 V/ns
TO-220F2
42
TO-220F
40
Power Dissipation TO-251/TO-252
W
TO-251L/TO-251S
55
TO-251S2/TO-251S4
TO-220F2
PD
0.33
Linear Derarting
Factor
TO-220F
TO-251/TO-252
TO-251L/TO-251S
0.32
W/°C
0.44
TO-251S2/TO-251S4
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 12mH, IAS = 6A, VDD = 50V, RG = 27, Starting TJ = 25°C
4. ISD 6A, di/dt 140A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220F/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-251L/TO-251S
TO-251S2/TO-251S4
TO-220F2
TO-220F
Junction to Case
TO-251/TO-252
TO-251L/TO-251S
TO-251S2/TO-251S4
SYMBOL
θJA
θJC
RATINGS
62.5
110
2.9
3.1
2.27
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-968.E


3Pages


6N70-P 電子部品, 半導体
6N70-P
TEST CIRCUITS AND WAVEFORMS(Cont.)
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
dv/dt controlled by RG
ISD controlled by pulse period
Same Type
as DUT
Power MOSFET
VDD
VGS
(Driver)
D=
Gate
Gate
Pulse
Pulse
Width
Period
10V
ISD
(DUT)
VDS
(DUT)
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-968.E

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
6N70-C

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
6N70-P

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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