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6N70 の電気的特性と機能

6N70のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 6N70
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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6N70 Datasheet, 6N70 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
6N70
6.0A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N70 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC 6N70 is universally applied in high efficiency switch
mode power supply.
FEATURES
* RDS(ON)<1.8@ VGS=10V, ID=3A
* High switching speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N70L-TF1-T
6N70G-TF1-T
6N70L-TF2-T
6N70G-TF2-T
6N70L-TF3-T
6N70G-TF3-T
6N70L-T2Q-T
6N70G-T2Q-T
6N70L-TQ2-T
6N70G-TQ2-T
6N70L-TQ2-R
6N70G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
TO-220F
TO-262
TO-263
TO-263
Pin Assignment
123
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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6N70 pdf, ピン配列
6N70
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
BVDSS/TJ
IDSS
IGSS
ID=250µA, VGS=0V
ID=250µA
VDS=700V
VDS=560V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
700 V
0.79 V/°C
25 µA
250 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA, VDS=5V 2.0
4.0
VGS=10V, ID=3A (Note 1)
1.5 1.8
V
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz (Note 1, 2)
900 1200
90 115
18 55
pF
pF
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=350V, ID=6A, RG=11.5
VGS=10V, VDS=560V,
ID=6A (Note 1, 2)
40 70
65 90
190 230
88 116
110 140
9
23.1
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
(Note 3)
IS Integral reverse pn-diode in
ISM the MOSFET
Drain-Source Diode Forward Voltage
(Note 2)
VSD IS=6A, VGS=0V, TJ = 25°C
6A
24 A
1.4 V
Body Diode Reverse Recovery Time
trr IF=6A, dIF/dt=100A/µs,
Body Diode Reverse Recovery Charge
QRR TJ = 25°C
Notes: 1. Pulse Test: Pulse width 250µs, Duty cycle 2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
440 ns
4.05 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N70 電子部品, 半導体
6N70
TYPICAL CHARACTERISTICS
Body-Diode Continuous Current vs.
Source to Drain Voltage
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, VSD (V)
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

Link :


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6N70-C

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6N70-P

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