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Datasheet 6N65Z-Q Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
16N65Z-QN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N65Z-Q 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65Z-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power
Unisonic Technologies
Unisonic Technologies
mosfet


6N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
16N60N-CHANNEL MOSFET

6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unl
CHONGQING PINGYANG
CHONGQING PINGYANG
mosfet
26N60N-Channel Power MOSFET, Transistor

SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thresho
nELL
nELL
mosfet
36N60N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Req
INCHANGE
INCHANGE
mosfet
46N60N-CHANNEL MOSFET

6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usual
ART CHIP
ART CHIP
mosfet
56N60600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Th
Unisonic Technologies
Unisonic Technologies
mosfet
66N60-CN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N60-C 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics
Unisonic Technologies
Unisonic Technologies
mosfet
76N60-PN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche c
Unisonic Technologies
Unisonic Technologies
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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