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6N65-C の電気的特性と機能

6N65-CのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 6N65-C
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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6N65-C Datasheet, 6N65-C PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
6N65-C
Preliminary
6A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N65-C is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.7@ VGS=10V, ID=3A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N65L-TA3-T
6N65G-TA3-T
TO-220
6N65L-TF1-T
6N65G-TF1-T
TO-220F1
6N65L-TF3-T
6N65G-TF3-T
TO-220F
6N65L-TN3-R
6N65G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12 3
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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6N65-C pdf, ピン配列
6N65-C
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
650
V
Drain-Source Leakage Current
IDSS
VDS=650V, VGS=0V
VDS=520V, VGS=0V, TJ =125°C
10 μA
100 μA
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA, Referenced to 25°C
100 nA
-100 nA
0.53 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=50V, ID=1.3A, VGS=10V,
IG=100μA (Note 1, 2)
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=30V, ID =0.5A, RG =25
(Note 1, 2)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 6 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.0 4.0
1.7
350
85
7
100
7
7
55
40
215
45
1.4
6
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
24 A
Reverse Recovery Time
tRR VGS = 0 V, IS = 6 A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
340 ns
3.5 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N65-C 電子部品, 半導体
6N65-C
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

Link :


部品番号部品説明メーカ
6N65-C

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
6N65-P

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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