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4N80-N の電気的特性と機能

4N80-NのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 4N80-N
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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4N80-N Datasheet, 4N80-N PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
4N80-N
4.0A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N80-N is a N-channel mode power MOSFET using
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance, and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 4N80-N is universally applied in high efficiency switch
mode power supply.
FEATURES
* RDS(on)<3.0@VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4N80L-TM3-T
4N80G-TM3-T
4N80L-TN3-R
4N80G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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4N80-N pdf, ピン配列
4N80-N
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=640V, VGS=10V,
ID=4A (Note 1,2)
VDD=400V, ID=4A,
RG=25(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =4A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr VGS=0V, IS=4A,
QRR dIF/dt=100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN
800
3.0
TYP MAX UNIT
V
950 mV/°C
10 µA
100 µA
100 nA
-100 nA
5.0
2.58 3.0
V
570 880
65 100
9.5 12
pF
pF
pF
24 35
7.3
7.25
50 60
110 130
95 110
70 90
nC
nC
nC
ns
ns
ns
ns
4
16
1.4
575
3.65
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N80-N 電子部品, 半導体
4N80-N
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
00 200 400 600 800 1000 1200
Drain-Source Breakdown Voltage, BVDSS (V)
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0 1 23 4 5
Gate Threshold Voltage, VTH (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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部品番号部品説明メーカ
4N80-N

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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