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10N65Z-Q の電気的特性と機能

10N65Z-QのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 10N65Z-Q
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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10N65Z-Q Datasheet, 10N65Z-Q PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
10N65Z-Q
10A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N65Z-Q is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) =0.95@ VGS=10V, ID=4.75A
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N65ZL-TF1-T
10N65ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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10N65Z-Q pdf, ピン配列
10N65Z-Q
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
IGSS
VGS=0V, ID= 250μA
VDS=650V, VGS=0V
Forward VGS=20V, VDS=0V
Reverse VGS=-20V, VDS=0V
BVDSS/TJ ID=250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=4.75A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=325V, ID=10A, RG=25
(Note1, 2)
VDS=520V, ID=10A, VGS=10V
(Note1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS=0V, IS=10A,
QRR dIF/dt=100A/µs (Note1)
Notes: 1. Pulse Test : Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650
0.7
V
1 µA
5 µA
-5 µA
V/°C
2.0 4.0 V
0.86 0.95
1300 2040 pF
123 215 pF
15 24 pF
55 70 ns
65 150 ns
300 350 ns
95 165 ns
81 95 nC
25 nC
28 nC
1.4 V
10 A
38 A
420 ns
4.2 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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10N65Z-Q 電子部品, 半導体
10N65Z-Q
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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部品番号部品説明メーカ
10N65Z-Q

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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