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10N60Z-QのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | 10N60Z-Q |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと10N60Z-Qダウンロード(pdfファイル)リンクがあります。 Total 6 pages
UNISONIC TECHNOLOGIES CO., LTD
10N60Z-Q
Preliminary
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N60Z-Q is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) < 0.8Ω@VGS =10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N60ZL-TF1-T
10N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS VDS=600V, VGS=0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=20 V, VDS=0V
VGS=-20 V, VDS=0V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=30V, ID=0.5A,
RG =25Ω (Note1, 2)
VDS=50V, ID=1.3A,
VGS=10 V (Note1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0 V, IS =10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
600
0.7
V
1 µA
5 µA
-5 µA
V/°C
2.0 4.0 V
0.7 0.8 Ω
790 1020 pF
139 180 pF
22 28 pF
56 70 ns
110 170 ns
300 360 ns
160 240 ns
43 56 nC
7 nC
12 nC
1.4 V
10 A
38 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3Pages 10N60Z-Q
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 10N60Z-Q データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
10N60Z-Q | N-CHANNEL POWER MOSFET | Unisonic Technologies |