|
|
PDF BFG424F Data sheet ( Hoja de datos )
| Número de pieza | BFG424F | |
| Descripción | NPN 25 GHz wideband transistor | |
| Fabricantes | Philips | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BFG424F (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
BFG424F
NPN 25 GHz wideband transistor
Rev. 01 — 21 March 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Very high power gain
s Low noise figure
s High transition frequency
s Emitter is thermal lead
s Low feedback capacitance
1.3 Applications
s Radio Frequency (RF) front end wideband applications such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVison (SATV) tuners
x high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
VCBO
VCEO
IC
Ptot
collector-base voltage open emitter
collector-emitter voltage open base
collector current
total power dissipation Tsp ≤ 90 °C
Min Typ Max Unit
- - 10 V
- - 4.5 V
- 25 30 mA
[1] - - 135 mW
1 page  
Philips Semiconductors
BFG424F
NPN 25 GHz wideband transistor
40
IC
(mA)
30
20
10
001aad818
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
0
012345
VCE (V)
(1) IB = 400 µA
(2) IB = 350 µA
(3) IB = 300 µA
(4) IB = 250 µA
(5) IB = 200 µA
(6) IB = 150 µA
(7) IB = 100 µA
(8) IB = 50 µA
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
CCBS
(fF)
160
120
hFE
80
40
001aad819
(1)
(2)
(3)
0
0 10 20 30 40
IC (mA)
(1) VCE = 3 V
(2) VCE = 2 V
(3) VCE = 1 V
Fig 3. DC current gain as a function of collector
current; typical values
001aad820
120
80
40
0
012345
VCB (V)
f = 1 MHz
Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values
BFG424F_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
9. Revision history
Table 9: Revision history
Document ID
Release date
BFG424F_1
20060321
Data sheet status
Product data sheet
BFG424F
NPN 25 GHz wideband transistor
Change notice
-
Supersedes
-
BFG424F_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BFG424F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFG424F | (BFGxxx) RF Bipolar Transistors | Philips |
| BFG424F | NPN 25 GHz wideband transistor | Philips |
| BFG424W | (BFGxxx) RF Bipolar Transistors | Philips |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |