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Número de pieza | IRHN7250SE | |
Descripción | RADIATION HARDENED POWER MOSFET | |
Fabricantes | International Rectifier | |
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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
IRHN7250SE
200V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHN7250SE 100K Rads (Si) 0.10Ω
ID
26A
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
SMD-1
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
26
16 A
104
150 W
1.2 W/°C
±20 V
500 mJ
26 A
15 mJ
5.9
-55 to 150
V/ns
oC
300 (for 5 sec.)
2.6 (Typical)
g
1
5/16/01
1 page Pre-Irradiation
IRHN7250SE
6000
5000
4000
3000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 26A
16
12
8
VDS = 160V
VDS = 100V
VDS = 40V
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25 ° C
VGS = 0 V
1
0.4 0.8 1.2 1.6 2.0 2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 10us
100us
10 1ms
TC = 25°C
TJ = 150° C
Single Pulse
1
1 10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRHN7250SE.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHN7250SE | RADIATION HARDENED POWER MOSFET | International Rectifier |
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