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IRHMS57Z60 の電気的特性と機能

IRHMS57Z60のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHMS57Z60
部品説明 RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHMS57Z60 Datasheet, IRHMS57Z60 PDF,ピン配置, 機能
PD-96961B
IRHMS57Z60
RADIATION HARDENED
JANSR2N7478T1
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/697
Product Summary
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57Z60 100K Rads (Si) 0.005545A* JANSR2N7478T1
IRHMS53Z60 300K Rads (Si) 0.005545A* JANSF2N7478T1
IRHMS54Z60 500K Rads (Si) 0.005545A* JANSG2N7478T1
IRHMS58Z60 1000K Rads (Si) 0.005545A* JANSH2N7478T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
45*
45*
180
208
1.67
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
1250
45
20.8
1.08
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/04/15

1 Page





IRHMS57Z60 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHMS57Z60, JANSR2N7478T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation …†
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source„
On-State Resistance (TO-3)
30 —
2.0 4.0
30 —
V
1.5 4.0
— 100
— -100
— 100 nA
— -100
— 10 — 25 µA
0.0040 0.0045
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 24V, VGS = 0V
VGS =12V, ID = 45A
RDS(on) Static Drain-to-Source On-State „
Resistance (Low-Ohmic TO-254)
— 0.0055 — 0.0060
VGS =12V, ID = 45A
VSD Diode Forward Voltage„
— 1.2 — 1.2 V
VGS = 0V, IS = 45A
1. Part numbers IRHMS57Z60 (JANSR2N7478T1), IRHMS53Z60 (JANSF2N7478T1) and IRHMS54Z60 (JANSG2N7478T1)
2. Part number IRHMS58Z60 (JANSH2N7478T1)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
38 ± 5%
300 ± 7.5%
(µm)
38 ± 7.5%
@VGS =
0V
30
@VGS =
-5V
30
61 ± 5%
330 ± 7.5%
31 ± 10%
25
25
84 ± 5%
350 ± 10%
28 ± 7.5%
25
25
VDS (V)
@VGS =
-10V
30
20
20
@VGS =
-15V
22.5
15
-
@VGS =
-20V
15
7.5
-
35
30
25
20
15
10
5
0
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
-5 -10 -15
Bias VGS (V)
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHMS57Z60 電子部品, 半導体
IRHMS57Z60, JANSR2N7478T1
Pre-Irradiation
160
LIMITED BY PACKAGE
120
80
40
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHMS57Z60

RADIATION HARDENED POWER MOSFET

International Rectifier
International Rectifier


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