DataSheet.jp

IRHMS57Z60 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHMS57Z60
部品説明 RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 8 pages
		

No Preview Available !

IRHMS57Z60 Datasheet, IRHMS57Z60 PDF,ピン配置, 機能
PD-96961B
IRHMS57Z60
RADIATION HARDENED
JANSR2N7478T1
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/697
Product Summary
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57Z60 100K Rads (Si) 0.005545A* JANSR2N7478T1
IRHMS53Z60 300K Rads (Si) 0.005545A* JANSF2N7478T1
IRHMS54Z60 500K Rads (Si) 0.005545A* JANSG2N7478T1
IRHMS58Z60 1000K Rads (Si) 0.005545A* JANSH2N7478T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
45*
45*
180
208
1.67
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
1250
45
20.8
1.08
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/04/15

1 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ IRHMS57Z60.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRHMS57Z60

RADIATION HARDENED POWER MOSFET

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap