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IRHMS57160 の電気的特性と機能

IRHMS57160のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHMS57160
部品説明 RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHMS57160 Datasheet, IRHMS57160 PDF,ピン配置, 機能
PD-95889D
IRHMS57160
RADIATION HARDENED
JANSR2N7471T1
POWER MOSFET
100V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/698
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57160 100K Rads (Si) 0.01345A* JANSR2N7471T1
IRHMS53160 300K Rads (Si) 0.01345A* JANSF2N7471T1
IRHMS54160 500K Rads (Si) 0.01345A* JANSG2N7471T1
IRHMS58160 1000K Rads (Si) 0.01445A* JANSH2N7471T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Absolute Maximum Ratings
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
45*
45* A
180
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
493
45
20.8
6.7
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
11/26/14

1 Page





IRHMS57160 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHMS57160, JANSR2N7471T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance (Low-Ohmic TO-254)
Diode Forward Voltage Ã
100 —
2.0 4.0
100 —
1.5 4.0
V
— 100
— -100
— 100 nA
— -100
— 10 — 25 µA
0.013 0.014
— 0.013 — 0.014
— 1.2 — 1.2 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS = 0V
VGS =12V, ID = 45A
VGS = 12V, ID = 45A
VGS = 0V, IS = 45A
1. Part numbers IRHMS57160 (JANSR2N7471T1), IRHMS53160 (JANSF2N7471T1) and IRHMS54160 (JANSG2N7471T1)
2. Part number IRHMS58160 (JANSH2N7471T1)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
38 ± 5%
300 ± 7.5%
(µm)
38 ± 7.5%
@VGS =
0V
100
@VGS =
-5V
100
61 ± 5%
330 ± 7.5%
31 ± 10%
100
100
84 ± 5%
350 ± 10%
28 ± 7.5%
100
100
VDS (V)
@VGS =
-10V
100
100
80
@VGS =
-15V
100
35
25
@VGS =
-20V
100
25
-
120
100
80
60
40
20
0
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
-5 -10 -15
Bias VGS (V)
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHMS57160 電子部品, 半導体
IRHMS57160, JANSR2N7471T1
Pre-Irradiation
100
LIMITED BY PACKAGE
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

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