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IRHMK57260SE PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHMK57260SE
部品説明 RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHMK57260SE Datasheet, IRHMK57260SE PDF,ピン配置, 機能
PD-96915
RADIATION HARDENED
IRHMK57260SE
POWER MOSFET
200V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
5 TECHNOLOGY
™
Product Summary
Part Number
Radiation Level
IRHMK57260SE 100K Rads (Si)
RDS(on)
0.044
ID
45A
Low-Ohmic
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
45
29
180
208
1.67
±20
256
45
20.8
19.8
-55 to 150
300 (for 5s)
8.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
12/24/04

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